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As feature dimensions of integrated circuits shrink, the associated geometrical constraints on junction depth impose severe restrictions on the thermal budget for processing such devices. Furthermore, due to the relatively low melting point of the first aluminum metallization level, such restrictions extend to the fabrication of multilevel structures that are now essential in increasing packing density of interconnect lines. The fabrication of ultra large scale integrated (ULSI) devices under thermal budget restrictions requires the reassessment of existing and the development of new microelectronic materials and processes. This book addresses three broad but interrelated areas. The first area focuses on the subject of rapid thermal processing (RTP), a technology that allows minimization of processing time while relaxing the constraints on high temperature. Initially developed to limit dopant redistribution, current applications of RTP are shown here to encompass annealing, oxidation, nitridation, silicidation, glass reflow, and contact sintering. In a second but complementary area, advances in equipment design and performance of rapid thermal processing equipment are presented in conjunction with associated issues of temperature measurement and control. Defect mechanisms are assessed together with the resulting properties of rapidly deposited and processed films. The concept of RTP integration for a full CMOS device process is also examined together with its impact on device characteristics.
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As feature dimensions of integrated circuits shrink, the associated geometrical constraints on junction depth impose severe restrictions on the thermal budget for processing such devices. Furthermore, due to the relatively low melting point of the first aluminum metallization level, such restrictions extend to the fabrication of multilevel structures that are now essential in increasing packing density of interconnect lines. The fabrication of ultra large scale integrated (ULSI) devices under thermal budget restrictions requires the reassessment of existing and the development of new microelectronic materials and processes. This book addresses three broad but interrelated areas. The first area focuses on the subject of rapid thermal processing (RTP), a technology that allows minimization of processing time while relaxing the constraints on high temperature. Initially developed to limit dopant redistribution, current applications of RTP are shown here to encompass annealing, oxidation, nitridation, silicidation, glass reflow, and contact sintering. In a second but complementary area, advances in equipment design and performance of rapid thermal processing equipment are presented in conjunction with associated issues of temperature measurement and control. Defect mechanisms are assessed together with the resulting properties of rapidly deposited and processed films. The concept of RTP integration for a full CMOS device process is also examined together with its impact on device characteristics.
Reseña del editor
Addresses three broad but interrelated areas. The first is the subject of rapid thermal processing, a technology that minimizes processing time while relaxing the constraints on high temperature. The second area presents advances in equipment design and performance of rapid thermal processing equipm
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Reduced Thermal Processing for ULSI (Nato Science Series B:)
Anbieter: Bibliomadness, Worthington, MA, USA
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Hardcover. Zustand: Good. No Jacket. Good condition. Ex-Library with minimal library markings. Some light soiling to covers and outside page edge. All intact. No writing in text pages. Bestandsnummer des Verkäufers 8699
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Reduced Thermal Processing for ULSI
Anbieter: Roland Antiquariat UG haftungsbeschränkt, Weinheim, Deutschland
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1989. 438 Seiten Guter Zustand, Leseseiten sind sauber und ohne Markierungen. Ecken leicht berieben bzw. bestoßen. Sonst gutes Ex. 9780306433825 Sprache: Englisch Gewicht in Gramm: 975 Gebundene Ausgabe, Größe: 0 x 0 x 0 cm. Bestandsnummer des Verkäufers 188038
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