SEMICONDUCTOR DEVICES: PHYSICS AND TECHNOLOGY, THIRD EDITION IS AN INTRODUCTION TO THE PHYSICAL PRINCIPLES OF MODERN SEMICONDUCTOR DEVICES AND THEIR ADVANCED FABRICATION TECHNOLOGY. IT BEGINS WITH A BRIEF HISTORICAL REVIEW OF MAJOR DEVICES AND KEY TECHNOLOGIES AND IS THEN DIVIDED INTO THREE SECTIONS: SEMICONDUCTOR MATERIAL PROPERTIES, PHYSICS OF SEMICONDUCTOR DEVICES AND PROCESSING TECHNOLOGY TO FABRICATE THESE SEMICONDUCTOR DEVICES.
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Semiconductor Devices: Physics and Technology, Third Edition is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices.
This Third Edition of Semiconductor Devices offers revised material that reflects many important discoveries and advances in device physics and integrated circuit processing that have taken place over the last decade.
Offering a basic introduction to physical principles of modern semiconductor devices and their advanced fabrication technology, the Third Edition presents students with theoretical and practical aspects of every step in device characterizations and fabrication, with an emphasis on integrated circuits.
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DESCRIPTION OF THE COVER ILLUSTRATION
The illustration shows a bird's-eye view of a 3-dimensional floating-gate non-volatile semiconductor memory (NVSM). NVSM is the foundation technology of information storage for all modern electronic systems (e.g., the digital cellular phone, digital camera, personal digital assistant, and global positioning system). NVSM has ushered in the "Digital Age", and pushed forward the electronics industry to become the largest industry in the world.
The device shown has a surrounding floating gate (the central circular section) and two control gates (the upper and lower rectangular sections). The device is a promising candidate for 1 tera-bit (1012 bits) and beyond NVSM chips. Courtesy of the Institute of Electrical and Electronics Engineers (IEEE) and S. Whang et al of Hynix Semiconductor Inc. (IEEE IEDM Technical Digest, p. 668, 2010).
For a discussion of NVSM and other semiconductor memories, see Chapter 6.
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