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Devices for Integrated Circuits: Silicon and III-V Compound Semiconductors (Computer Engineering) - Hardcover

Casey, H. Craig

 
9780471171348: Devices for Integrated Circuits: Silicon and III-V Compound Semiconductors (Computer Engineering)
Hardcover
ISBN 10: 0471171344 ISBN 13: 9780471171348
Verlag: Wiley, 1998

Inhaltsangabe

This book develops the device physics of the Si and III-V compound semiconductor devices used in integrated circuits. Important equations are derived from basic physical concepts. The physics of these devices are related to the parameters used in SPICE. Terminology is intended to prepare students for reading technical journals on semiconductor devices.

This text is suitable for first-year graduate students and seniors in Electrical Engineering; graduate students in Material Science and Chemical Engineering, interested in semiconductor materials; Computer Science students interested in custom VLSI design; and professionals in the semiconductor industry.

Die Inhaltsangabe kann sich auf eine andere Ausgabe dieses Titels beziehen.

Über die Autorin bzw. den Autor

H. Craig Casey is the author of Devices for Integrated Circuits: Silicon and III-V Compound Semiconductors, published by Wiley.

Von der hinteren Coverseite

A detailed introduction of the Si and III-V compound semiconductors As you read through this text, you ll gain a thorough understanding of the device physics of the Si and III-V compound semiconductors used in integrated circuits. The device physics of pn junctions, bipolar transistors, Schottky barriers, MOS capacitors, and MOS field-effect transistors (MOSFETs) are also developed. And the physical understanding of the material is emphasized throughout, with important equations being derived from basic physical concepts. Basic concepts from quantum and statistical mechanics are used to describe electrons and holes in semiconductors. Carrier transport and recombination processes are explained in detail and are applied to the description of the pn junction. And the physics of the semiconductor devices are related to the parameters used in Spice, which are illustrated using PSpice examples and problems. Unique features of the text:

  • The physics of semiconductor devices is related to the parameters used in Spice, and detailed instructions are included on PSpice.
  • Circuit applications are given to illustrate the use of the devices and to provide a foundation for subsequent topics in electronic circuits.
  • Includes coverage of topics such as the inversion layer thickness, drain current flow in field-effect transistors after pinch off, and the subthreshold current in MOSFETs.
  • Figures and examples based on realistic device parameters are used to illustrate important concepts.

Aus dem Klappentext

A detailed introduction of the Si and III-V compound semiconductors As you read through this text, you’ll gain a thorough understanding of the device physics of the Si and III-V compound semiconductors used in integrated circuits. The device physics of pn junctions, bipolar transistors, Schottky barriers, MOS capacitors, and MOS field-effect transistors (MOSFETs) are also developed. And the physical understanding of the material is emphasized throughout, with important equations being derived from basic physical concepts. Basic concepts from quantum and statistical mechanics are used to describe electrons and holes in semiconductors. Carrier transport and recombination processes are explained in detail and are applied to the description of the pn junction. And the physics of the semiconductor devices are related to the parameters used in Spice, which are illustrated using PSpice examples and problems. Unique features of the text:

  • The physics of semiconductor devices is related to the parameters used in Spice, and detailed instructions are included on PSpice.
  • Circuit applications are given to illustrate the use of the devices and to provide a foundation for subsequent topics in electronic circuits.
  • Includes coverage of topics such as the inversion layer thickness, drain current flow in field-effect transistors after pinch off, and the subthreshold current in MOSFETs.
  • Figures and examples based on realistic device parameters are used to illustrate important concepts.

„Über diesen Titel“ kann sich auf eine andere Ausgabe dieses Titels beziehen.

Verlag
Wiley
Erscheinungsdatum
1998
Sprache
Englisch
ISBN 10 
0471171344
ISBN 13 
9780471171348
Einband
Gebundene Ausgabe
Auflage
1
Anzahl der Seiten
544
Kontakt zum Hersteller
Wiley-VCH GmbH
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