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Principles and Technology of Modulation Doped Field Effect Transistors: v. 1 (Design & Measurement in Electronic Engineering) - Hardcover
Inhaltsangabe
Since the invention of the transistor, there has been a great deal of activity and progress in semiconductor technology and understanding, particularly in new heterostructures and superlattices as well as devices based on them. With the development of high quality SiO2 on Si having low interface state densities, MOSFET devices relying on the high mobility two dimensional electron became available in the 1960s and represent the workhorse of integrated circuits today. Two-dimensional electron gas, similar to that in MOSFETs, can also be obtained at GaAs/AlGaAs interfaces which provides even higher mobility, higher velocity and a lattice matched interface. MOSFET-like devices, called MODFETs, have already achieved switching speeds of about 5 Ps at 77K, current gain cut-off frequencies of about 250 GHz and maximum oscillation frequencies of about 400 GHz. In addition to GaAs/AIGaAs on GaAs, the strained system of InGaAs/AIGaAs on GaAs and the InGaAs/InAlAs system on InP substrates have been investigated. In fact, the InP system, at the time of this writing, held the milimeter wave fT current gain cut-off frequency record and yielded extremely low-noise operation, 1dB at 60 Ghz for 0.2 mu gate lengths. In this book, fundamentals, technology and performance of MODFETs, both as microwave and digital devices, are treated in detail. In addition, introductory material particularly that dealing with semiconductor and heterojunction physics, where applicable, is also provided. The book is arranged into two volumes with a total of nine chapters. Volume 1 contains Chapters 1 to 5, and Volume 2 covers Chapters 6 to 9.
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Since the invention of the transistor, there has been a great deal of activity and progress in semiconductor technology and understanding, particularly in new heterostructures and superlattices as well as devices based on them. With the development of high quality SiO2 on Si having low interface state densities, MOSFET devices relying on the high mobility two dimensional electron became available in the 1960s and represent the workhorse of integrated circuits today. Two-dimensional electron gas, similar to that in MOSFETs, can also be obtained at GaAs/AlGaAs interfaces which provides even higher mobility, higher velocity and a lattice matched interface. MOSFET-like devices, called MODFETs, have already achieved switching speeds of about 5 Ps at 77K, current gain cut-off frequencies of about 250 GHz and maximum oscillation frequencies of about 400 GHz. In addition to GaAs/AIGaAs on GaAs, the strained system of InGaAs/AIGaAs on GaAs and the InGaAs/InAlAs system on InP substrates have been investigated. In fact, the InP system, at the time of this writing, held the milimeter wave fT current gain cut-off frequency record and yielded extremely low-noise operation, 1dB at 60 Ghz for 0.2 mu gate lengths. In this book, fundamentals, technology and performance of MODFETs, both as microwave and digital devices, are treated in detail. In addition, introductory material particularly that dealing with semiconductor and heterojunction physics, where applicable, is also provided. The book is arranged into two volumes with a total of nine chapters. Volume 1 contains Chapters 1 to 5, and Volume 2 covers Chapters 6 to 9.
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- VerlagJohn Wiley & Sons Ltd
- Erscheinungsdatum1991
- ISBN 10 0471929204
- ISBN 13 9780471929208
- EinbandTapa dura
- SpracheEnglisch
- Anzahl der Seiten284
- Kontakt zum HerstellerNicht verfügbar
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Principles and Technology of Modulation Doped Field Effect Transistors: v. 1
Anbieter: Ammareal, Morangis, Frankreich
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Hardcover. Zustand: Très bon. Ancien livre de bibliothèque. Légères traces d'usure sur la couverture. Couverture différente. Edition 1991. Ammareal reverse jusqu'à 15% du prix net de cet article à des organisations caritatives. ENGLISH DESCRIPTION Book Condition: Used, Very good. Former library book. Slight signs of wear on the cover. Different cover. Edition 1991. Ammareal gives back up to 15% of this item's net price to charity organizations. Bestandsnummer des Verkäufers D-560-937
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Principles and Technology of Modulation Doped Field Effect Transistors Morkoc, Hadis; etc.; Unlu, H. and Ji, G.
Anbieter: Librairie Parrêsia, Figeac, Frankreich
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Zustand: Used: Very Good. Principles and Technology of Modulation Doped Field Effect Transistors: v. 1 | Morkoc et alii | Wiley, 1991, in-8 cartonnage éditeur, 261 pages. Couverture propre. Dos solide. Intérieur frais. Exemplaire de bibliothèque : petit code barre en pied de 1re de couv., cotation au dos, rares et discrets petits tampons à l'intérieur de l'ouvrage. Bel état ! [BT19+]. Bestandsnummer des Verkäufers 0620U9HTLQ1
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Principles and technology of MODFETs (Design and measurement in electronic engineering) (v. 1)
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Hardcover. Zustand: Like New. Like New. book. Bestandsnummer des Verkäufers ERICA75404719292045
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