Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices: 47 (NATO Science Partnership Subseries: 3) - Hardcover

Buch 16 von 26: Nato Science Partnership Subseries: 3
 
9780792350071: Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices: 47 (NATO Science Partnership Subseries: 3)
Hardcover
ISBN 10: 0792350073 ISBN 13: 9780792350071
Verlag: Springer, 1998

Inhaltsangabe

An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3 nm regime. The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices. The contributing authors are leading scientists, drawn from academic, industrial and government laboratories throughout the world, and representing such backgrounds as basic and applied physics, chemistry, electrical engineering, surface science, and materials science.
Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

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Reseña del editor

An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3 nm regime. The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices. The contributing authors are leading scientists, drawn from academic, industrial and government laboratories throughout the world, and representing such backgrounds as basic and applied physics, chemistry, electrical engineering, surface science, and materials science.
Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

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Verlag
Springer
Erscheinungsdatum
1998
Sprache
Englisch
ISBN 10 
0792350073
ISBN 13 
9780792350071
Einband
Tapa dura
Anzahl der Seiten
524
Herausgeber
Garfunkel Eric, Gusev Evgeni, Vul' Alexander
Kontakt zum Hersteller
Nicht verfügbar
Verantwortliche Person
CMN Printpool Inh. Mathis Neumann
https://www.also.com/ec/cms5/en_6000/6000/index.jsp

Friedrich-Karl-Str. 9
Hamburg
Deutschland

Weitere beliebte Ausgaben desselben Titels

9780792350088: Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices: 47 (NATO Science Partnership Subseries: 3, 47)

Vorgestellte Ausgabe

ISBN 10:  0792350081 ISBN 13:  9780792350088
Verlag: Springer, 2008
Softcover