Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies.
This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.
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Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000 Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-ox. Bestandsnummer des Verkäufers 5969607
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Buch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy. 636 pp. Englisch. Bestandsnummer des Verkäufers 9780792366850
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Softcover. Hardcover 624 pages. with Figures and tables. In good clean, solid condition. Nato Science Series II. Mathematics, Physics and Chemistry Vol. 2. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000. in englischer Sprache (in english). Bestandsnummer des Verkäufers P5-0030
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Buch. Zustand: Neu. Defects in SiO2 and Related Dielectrics: Science and Technology | Gianfranco Pacchioni (u. a.) | Buch | NATO Science Series II: Mathematics, Physics and Chemistry | viii | Englisch | 2000 | Springer Netherland | EAN 9780792366850 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand. Bestandsnummer des Verkäufers 102549877
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Zustand: New. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000 Editor(s): Pacchioni, G.; Skuja, Linards; Griscom, David L. Series: NATO Science Series II. Num Pages: 624 pages, 87 black & white illustrations, biography. BIC Classification: PHK; TGM. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 235 x 155 x 34. Weight in Grams: 1061. . 2000. Hardback. . . . . Bestandsnummer des Verkäufers V9780792366850
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Buch. Zustand: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies.This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 636 pp. Englisch. Bestandsnummer des Verkäufers 9780792366850
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