An advanced undergraduate/graduate-level text explaining the properties and roles of extended defects in semiconductors.
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David Holt is an Emeritus Professor in the Department of Materials at Imperial College, London. He obtained his doctorate in Physical Metallurgy from the University of Birmingham, UK, in 1956, after which he held a number of academic positions over five years in the physics department at the University of the Witwatersrand, South Africa, before moving to the Department of Metallurgy at Imperial College, London. He has remained at Imperial College since then, except for a sabbatical year in the School of Physics at the University of New South Wales, Australia, and shorter periods at the Indian Institute of Technology, Kanpur, India. He has been a regular visitor at the Maspec Institute (now part of IMEM) in Parma, Italy. He researched the science and technology of semiconducting materials and devices and developed and applied techniques for their characterization in the scanning electron microscope. He is author or co-author of approximately 150 scientific publications and has co-authored or edited five previous books.
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Paperback. Zustand: new. Paperback. The elucidation of the effects of structurally extended defects on electronic properties of materials is especially important in view of the current advances in electronic device development that involve defect control and engineering at the nanometer level. This book surveys the properties, effects, roles and characterization of extended defects in semiconductors. The basic properties of extended defects (dislocations, stacking faults, grain boundaries, and precipitates) are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. These topics are among the central issues in the investigation and applications of semiconductors and in the operation of semiconductor devices. The authors preface their treatment with an introduction to semiconductor materials and conclude with a chapter on point defect maldistributions. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics. A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. Bestandsnummer des Verkäufers 9781107424142
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Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergradu. Bestandsnummer des Verkäufers 447218268
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Taschenbuch. Zustand: Neu. Extended Defects in Semiconductors | Electronic Properties, Device Effects and Structures | D. B. Holt (u. a.) | Taschenbuch | Englisch | 2014 | Cambridge University Press | EAN 9781107424142 | Verantwortliche Person für die EU: Libri GmbH, Europaallee 1, 36244 Bad Hersfeld, gpsr[at]libri[dot]de | Anbieter: preigu Print on Demand. Bestandsnummer des Verkäufers 105193766
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Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The elucidation of the effects of structurally extended defects on electronic properties of materials is especially important in view of the current advances in electronic device development that involve defect control and engineering at the nanometer level. This book surveys the properties, effects, roles and characterization of extended defects in semiconductors. The basic properties of extended defects (dislocations, stacking faults, grain boundaries, and precipitates) are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. These topics are among the central issues in the investigation and applications of semiconductors and in the operation of semiconductor devices. The authors preface their treatment with an introduction to semiconductor materials and conclude with a chapter on point defect maldistributions. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics. Bestandsnummer des Verkäufers 9781107424142
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Zustand: New. An advanced undergraduate/graduate-level text explaining the properties and roles of extended defects in semiconductors. Num Pages: 644 pages, black & white illustrations. BIC Classification: PHFC; TGMT; TGX. Category: (P) Professional & Vocational. Dimension: 244 x 170 x 33. Weight in Grams: 1010. . 2014. Paperback. . . . . Books ship from the US and Ireland. Bestandsnummer des Verkäufers V9781107424142
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Zustand: New. An advanced undergraduate/graduate-level text explaining the properties and roles of extended defects in semiconductors. Num Pages: 644 pages, black & white illustrations. BIC Classification: PHFC; TGMT; TGX. Category: (P) Professional & Vocational. Dimension: 244 x 170 x 33. Weight in Grams: 1010. . 2014. Paperback. . . . . Bestandsnummer des Verkäufers V9781107424142
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