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Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change - Softcover

Li, Hai; Chen, Yiran

 
9781138076631: Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change
Softcover
ISBN 10: 1138076635 ISBN 13: 9781138076631
Verlag: CRC Press, 2017

Inhaltsangabe

The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.

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Über die Autorin bzw. den Autor

Hai Li

Von der hinteren Coverseite

The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.

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Verlag
CRC Press
Erscheinungsdatum
2017
Sprache
Englisch
ISBN 10 
1138076635
ISBN 13 
9781138076631
Einband
Taschenbuch
Anzahl der Seiten
203
Kontakt zum Hersteller
preigu GmbH & Co. KG
mail@preigu.de

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