Nanoscale Memory Repair (Integrated Circuits and Systems) - Hardcover

Horiguchi, Masashi; Itoh, Kiyoo

Hardcover

ISBN 10: 1441979573 ISBN 13: 9781441979575

Verlag: Springer, 2011

Inhaltsangabe

Yield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. This book systematically describes these yield and reliability issues in terms of mathematics and engineering, as well as an array of repair techniques, based on the authors’ long careers in developing memories and low-voltage CMOS circuits. Nanoscale Memory Repair gives a detailed explanation of the various yield models and calculations, as well as various, practical logic and circuits that are critical for higher yield and reliability.

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Yield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. As a result, repair techniques have been indispensable for nano-scale memories. Without these techniques, even modern MPUs/ SoCs, in which memories have dominated the area and performance, could not have been designed successfully.

This book systematically describes these yield and reliability issues in terms of mathematics and engineering, as well as an array of repair techniques, based on the authors’ long careers in developing memories and low-voltage CMOS circuits. Nanoscale Memory Repair gives a detailed explanation of the various yield models and calculations, as well as various, practical logic and circuits that are critical for higher yield and reliability.

• Presents the first comprehensive reference to reliability and repair techniques for nano-scale memories;
• Covers both the mathematical foundations and engineering applications of yield and reliability in nano-scale memories;
• Includes a variety of practical circuits and logic, critical for higher yield and reliability, which have been proven successful during the authors’ extensive experience in developing memories and low-voltage CMOS circuits.
  
  

Details zur Ausgabe

• Verlag: Springer
• Erscheinungsdatum: 2011
• Sprache: Englisch
• ISBN 10: 1441979573
• ISBN 13: 9781441979575
• Einband: Gebundene Ausgabe
• Anzahl der Seiten: 228
• Kontakt zum Hersteller: Springer Nature Customer Service Center GmbH; ProductSafety@springernature.com; ; Tiergartenstr. 17; Heidelberg; 69121; Deutschland