Lithium-Drifted Germanium Detectors: Their Fabrication and Use: An Annotated Bibliography - Softcover

Brownridge, I. C. C.

 
9781461346005: Lithium-Drifted Germanium Detectors: Their Fabrication and Use: An Annotated Bibliography
Softcover
ISBN 10: 1461346002 ISBN 13: 9781461346005
Verlag: Springer, 2011

Inhaltsangabe

A lithium-drifted germanium detector is a semiconductor de­ vice which operates at liquid nitrogen temperature, and is used for detection of nuclear radiation, mostly gamma ray. The detection occurs when the y-ray undergoes an interaction in the intrinsic or I region of the semiconductor. The interaction results in the pro­ duction of charge carriers which are swept out by an electric field. This is accomplished by reverse biasing the detector with approxi­ mately 100 v/mm of intrinsic material. The total amount of charge swept out is proportional to the energy dissipated in the intrinsic region. This may include the total energy of the photon, but gen­ erally somewhat less. The Ge(Li) device is a semiconductor p-n device with a very large intrinsic region between the positive carrier region and the negative carrier region (P-I-N). The fabrication of this device consists of three major steps: the diffusion of the lithium into the p-type germanium to give an n-type surface region, the drifting process to obtain the intrinsic region as deeply as possible, and the surface preparation. There are numerous procedures for the various steps as well as criteria for material selection and the preparation of the materials.

Die Inhaltsangabe kann sich auf eine andere Ausgabe dieses Titels beziehen.

Reseña del editor

A lithium-drifted germanium detector is a semiconductor de­ vice which operates at liquid nitrogen temperature, and is used for detection of nuclear radiation, mostly gamma ray. The detection occurs when the y-ray undergoes an interaction in the intrinsic or I region of the semiconductor. The interaction results in the pro­ duction of charge carriers which are swept out by an electric field. This is accomplished by reverse biasing the detector with approxi­ mately 100 v/mm of intrinsic material. The total amount of charge swept out is proportional to the energy dissipated in the intrinsic region. This may include the total energy of the photon, but gen­ erally somewhat less. The Ge(Li) device is a semiconductor p-n device with a very large intrinsic region between the positive carrier region and the negative carrier region (P-I-N). The fabrication of this device consists of three major steps: the diffusion of the lithium into the p-type germanium to give an n-type surface region, the drifting process to obtain the intrinsic region as deeply as possible, and the surface preparation. There are numerous procedures for the various steps as well as criteria for material selection and the preparation of the materials.

„Über diesen Titel“ kann sich auf eine andere Ausgabe dieses Titels beziehen.

Verlag
Springer
Erscheinungsdatum
2011
Sprache
Englisch
ISBN 10 
1461346002
ISBN 13 
9781461346005
Einband
Tapa blanda
Anzahl der Seiten
228
Kontakt zum Hersteller
Nicht verfügbar
Verantwortliche Person
CMN Printpool Inh. Mathis Neumann
https://www.also.com/ec/cms5/en_6000/6000/index.jsp

Friedrich-Karl-Str. 9
Hamburg
Deutschland

Weitere beliebte Ausgaben desselben Titels

9780306651809: Lithium Drifted Germanium Detectors: Their Fabrication and Use

Vorgestellte Ausgabe

ISBN 10:  0306651807 ISBN 13:  9780306651809
Verlag: Kluwer Academic/Plenum Publishers, 1972
Hardcover