Intersubband Transitions in Quantum Wells: 288 (NATO Science Series B:, 288) - Softcover

 
9781461364757: Intersubband Transitions in Quantum Wells: 288 (NATO Science Series B:, 288)
Softcover
ISBN 10: 1461364752 ISBN 13: 9781461364757
Verlag: Springer, 1992

Inhaltsangabe

This book contains the lectures delivered at the NATO Advanced Research Workshop on the "Intersubband Transistions in Quantum Wells" held in Cargese, France, between the t 9 h and the 14th of September 1991. The urge for this Workshop was justified by the impressive growth of work dealing with this subject during the last two or three years. Indeed, thanks to recent progresses of epitaxial growth techniques, such as Molecular Beam Epitaxy, it is now possible to realize semiconductor layers ( e.g. GaAs) with thicknesses controlled within one atomic layer, sandwiched between insulating layers (e.g. AlGaAs). When the semiconducting layer is very thin, i.e. less than 15 nm, the energy of the carriers corresponding to their motion perpendicular to these layers is quantized, forming subbands of allowed energies. Because of the low effective masses in these semiconducting materials, the oscillator strengths corresponding to intersubband transitions are extremely large and quantum optical effects become giant in the 5 - 20 ~ range: photoionization, optical nonlinearities, ... Moreover, a great theoretical surprise is that - thanks to the robustness of the effective mass theory - these quantum wells are a real life materialization of our old text book one-dimensional quantum well ideal. Complex physical phenomena may then be investigated on a simple model system.

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Reseña del editor

This book contains the lectures delivered at the NATO Advanced Research Workshop on the "Intersubband Transistions in Quantum Wells" held in Cargese, France, between the t 9 h and the 14th of September 1991. The urge for this Workshop was justified by the impressive growth of work dealing with this subject during the last two or three years. Indeed, thanks to recent progresses of epitaxial growth techniques, such as Molecular Beam Epitaxy, it is now possible to realize semiconductor layers ( e.g. GaAs) with thicknesses controlled within one atomic layer, sandwiched between insulating layers (e.g. AlGaAs). When the semiconducting layer is very thin, i.e. less than 15 nm, the energy of the carriers corresponding to their motion perpendicular to these layers is quantized, forming subbands of allowed energies. Because of the low effective masses in these semiconducting materials, the oscillator strengths corresponding to intersubband transitions are extremely large and quantum optical effects become giant in the 5 - 20 ~ range: photoionization, optical nonlinearities, ... Moreover, a great theoretical surprise is that - thanks to the robustness of the effective mass theory - these quantum wells are a real life materialization of our old text book one-dimensional quantum well ideal. Complex physical phenomena may then be investigated on a simple model system.

Reseña del editor

Proceedings of a NATO ARW held in Cargese, France, September 9-14, 1991

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Verlag
Springer
Erscheinungsdatum
1992
Sprache
Englisch
ISBN 10 
1461364752
ISBN 13 
9781461364757
Einband
Tapa blanda
Anzahl der Seiten
360
Herausgeber
Rosencher Emmanuel
Kontakt zum Hersteller
Nicht verfügbar
Verantwortliche Person
CMN Printpool Inh. Mathis Neumann
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Friedrich-Karl-Str. 9
Hamburg
Deutschland

Weitere beliebte Ausgaben desselben Titels

9780306442049: Intersubband Transitions in Quantum Wells: Proceedings of a NATO Advanced Research Workshop Held in Cargese, France, September 9-14, 1991: v.288 (NATO Science Series B: Physics)

Vorgestellte Ausgabe

ISBN 10:  0306442043 ISBN 13:  9780306442049
Verlag: Kluwer Academic / Plenum Publishers, 1992
Hardcover