Power Semiconductor Materials and Devices: Volume 483 (MRS Proceedings) - Hardcover

Hardcover

ISBN 10: 1558993886 ISBN 13: 9781558993884

Verlag: Cambridge University Press, 1998

Inhaltsangabe

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

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Reseña del editor

IInnovative silicon concepts and nonsilicon materials such as SiC, diamond and group-III nitrides are finding interest for new generations of electronic devices operational at much higher voltages and temperatures than conventional lower-power transistors and integrated circuits. Improved bulk and epitaxial growth, processing, device design and circuit architecture, bonding, testing and packaging are all necessary for realization of new applications. It seems clear that Si will continue to dominate most power electronics applications for the next decade, while SiC is by far the most mature of the newer materials technologies. The group-III nitrides are also extremely attractive because of their excellent transport properties and the availability of heterostructures. It is likely that hybrid GaN/SiC devices will have a role due to the need for high thermal conductivity substrates for thermal management. Diamond appears to be trailing because of the inability to dope with donor impurities, although in principle, its properties are probably better suited to high-temperature applications than many other materials.

Product Description

Pwr Semiconductor Mats Devices V483 Hb editado por Cambridge

Details zur Ausgabe

• Verlag: Cambridge University Press
• Erscheinungsdatum: 1998
• Sprache: Englisch
• ISBN 10: 1558993886
• ISBN 13: 9781558993884
• Einband: Tapa dura
• Anzahl der Seiten: 478
• Herausgeber: Pearton S. J., Shul R. J., Wolfgang E., Ren F., Tenconi S.
• Kontakt zum Hersteller: Nicht verfügbar
• Verantwortliche Person: Avery; https://www.avery.fr/; ; chemin des peupliers 27; Dardilly; Frankreich