The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Die Inhaltsangabe kann sich auf eine andere Ausgabe dieses Titels beziehen.
As silicon-integrated circuit technology enters the sub-100nm realm, continued progress will depend on a fundamental understanding of the physics of materials processing. The high cost of processing experimental lots and the speed at which new devices brought to the market have created a new emphasis on realistic physical models incorporated in technology CAD (TCAD) simulation tools. The book brings together researchers to review recent developments in the integrated-circuit community and to identify key issues for future research in this field. Results of research on the physical mechanisms involved in silicon device processing are presented both from experimental and theoretical viewpoints. The application of this research to TCAD process simulation models is also addressed. Topics include: shallow junctions and transient enhanced diffusion; extended defects and transient enhanced diffusion; impurities and point defects; implant technology, thin films and surfaces and point defects and diffusion in SiGe.
„Über diesen Titel“ kann sich auf eine andere Ausgabe dieses Titels beziehen.
Gratis für den Versand innerhalb von/der Deutschland
Versandziele, Kosten & DauerAnbieter: Buchpark, Trebbin, Deutschland
Zustand: Gut. Zustand: Gut - Gebrauchs- und Lagerspuren. | Seiten: 228 | Sprache: Englisch | Produktart: Bücher. Bestandsnummer des Verkäufers 12300784/3
Anzahl: 1 verfügbar
Anbieter: Plurabelle Books Ltd, Cambridge, Vereinigtes Königreich
Hardcover. Zustand: Very Good. Series: Materials Research Society Symposium Proceedings 228p blue hardback with bright silver lettering, excellent copy, as new, pencil marks to a few pages Language: English. Bestandsnummer des Verkäufers 155238
Anzahl: 1 verfügbar