Electrical Memory Materials and Devices (Rsc Polymer Chemistry, 18, Band 18) - Hardcover

Hardcover

ISBN 10: 1782621164 ISBN 13: 9781782621164

Verlag: Royal Society of Chemistry, 2015

Inhaltsangabe

Information technology is essential to our daily life, and the limitations of silicone based memory systems mean a growing amount of research is focussed on finding an inexpensive alternative to meet our needs and allow the continued development of the industry. Inorganic silicone based technology is increasingly costly and complex and is physically limited by the problems of scaling down. Organic electrical memory devices are comparatively low cost, offer flexibility in terms of chemical structure, are compatible with flexible substrates and allow easy processing. For these reasons polymeric memory nanoscale materials are considered by many to be a potential substitute for conventional semiconductor memory systems. This edited book focusses solely on organic memory devices, providing a full background and overview of the area before bringing the reader up to date with the current and ongoing research in this area. The broad appeal of this book will be applicable to a wide range of researchers and those working in industry, in particular those working in materials, electrical and chemical engineering.

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Information technology is essential to our daily life, and the limitations of silicone based memory systems mean a growing amount of research is focussed on finding an inexpensive alternative to meet our needs and allow the continued development of the industry. Inorganic silicone based technology is increasingly costly and complex and is physically limited by the problems of scaling down. Organic electrical memory devices are comparatively low cost, offer flexibility in terms of chemical structure, are compatible with flexible substrates and allow easy processing. For these reasons polymeric memory nanoscale materials are considered by many to be a potential substitute for conventional semiconductor memory systems. This edited book focusses solely on organic memory devices, providing a full background and overview of the area before bringing the reader up to date with the current and ongoing research in this area. The broad appeal of this book will be applicable to a wide range of researchers and those working in industry, in particular those working in materials, electrical and chemical engineering.

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Electrical Memory Materials and Devices

By Wen-Chang Chen

The Royal Society of Chemistry

Copyright © 2016 The Royal Society of Chemistry
All rights reserved.

ISBN: 978-1-78262-116-4

Contents

Chapter 1 Organic Electronic Memory Devices Bin Zhang, Yu Chen, Koon-Gee Neoh, and En-Tang Kang, 1, 
Chapter 2 Organic Resistor Memory Devices Tadanori Kurosawa, Tomoya Higashihara, and Mitsuru Ueda, 54, 
Chapter 3 Donor-Acceptor Organic Molecule Resistor Switching Memory Devices Jianmei Lu, Hua Li, and Qing-Feng Xu, 101, 
Chapter 4 High Performance Polyimides for Resistive Switching Memory Devices Hung-Ju Yen, Jia-Hao Wu, and Guey-Sheng Liou, 136, 
Chapter 5 Nonconjugated Polymers with Electroactive Chromophore Pendants Moonhor Ree, Yong-Gi Ko, Sungjin Song, and Brian J. Ree, 167, 
Chapter 6 Polymer Composites for Electrical Memory Device Applications Cheng-Liang Liu and Wen-Chang Chen, 206, 
Chapter 7 Conjugated Polymers for Memory Device Applications Cheng-Liang Liu and Wen-Chang Chen, 233, 
Chapter 8 Non-Volatile Memory Properties of Donor–Acceptor Block Copolymers Nam-Goo Kang, Myung-Jin Kim, and Jae-Suk Lee, 256, 
Chapter 9 Organic Transistor Memory Devices and Materials Chiao-Wei Tseng and Yu-Tai Tao, 295, 
Chapter 10 Organic Floating Gate Transistor Memory Devices Hung Chin Wu, Ying-Hsuan Chou, Hsuan-Chun Chang, and Wen-Chang Chen, 330, 
Chapter 11 Organic Ferroelectric Memory Devices Hsuan-Chun Chang, Hung-Chin Wu, and Wen-Chang Chen, 355, 
Chapter 12 Summary and Outlook Wen-Chang Chen, 377, 
Subject Index, 381, 

CHAPTER 1

Organic Electronic Memory Devices

BIN ZHANG, YU CHEN, KOON-GEE NEOH, AND EN-TANG KANG

1.1 Introduction

As the performance of digital gadgets for information technology advances, the complexity of data storage devices increases correspondingly. Conventional memory devices are implemented on semiconductor-based integrated circuits, such as transistors and capacitors. In order to achieve greater density of data storage and faster access to information, more components are deliberately packed onto a single chip. The feature size of transistors has decreased from 130 nm in the year 2000 to 32 nm at present. Silicon-based semiconductor devices become less stable below 22 nm, and the reliability to store and read individual bits of information will be substantially reduced by severe "cross-talk" issues. Moreover, power consumption and unwanted heat generation are also of increasing concern, and the fidelity of addressing the memory units diminishes correspondingly. Therefore, the current state-of-the-art memory technologies are no longer capable of fulfilling the requirements for information storage of the near future.

Regarding the aspiration for new data storage technologies, ferroelectric random access memory (FeRAM), magnetoresistive random access memory (MRAM), phase change memory (PCM), and organic/polymer memory have appeared on the scene of the information technology industry. Instead of information storage and retrieval by encoding "0" and "1" as the amount of stored charge in the current silicon-based memory devices, the new technologies are based on electrical bistability of materials arising from changes in certain intrinsic properties, such as magnetism, polarity, phase, conformation and conductivity, in response to the applied electric field. The advantages of organic and polymer electronic memory include good processability, molecular design through chemical synthesis, simplicity of device structure, miniaturized dimensions, good scalability, low-cost potential, low-power operation, multiple state properties, 3D stacking capability and large capacity for data storage.

Extensive studies toward new organic/polymeric materials and device structures have been carried out to demonstrate their unique memory performances. This chapter provides an introduction to the basic concepts and history of electronic memory, followed by a brief description of the structures and switching mechanisms of electrical memory devices classified as transistors, capacitors and resistors. Then, the progress of organic-based memory materials and devices is systematically summarized and discussed. Lastly, the challenges posed to the development of novel organic electrical memory devices are summarized.

1.2 Basic Concepts of Electronic Memory

The basic goal of a memory device is to provide a means for storing and accessing binary digital data sequences of "1's" and "0's", as one of the core functions (primary storage) of modern computers. An electronic memory device is a form of semiconductor storage which is fast in response and compact in size, and can be read and written when coupled with a central processing unit (CPU, a processor). In conventional silicon-based electronic memory, data are stored based on the amount of charge stored in the memory cells. Organic/polymer electronic memory stores data in an entirely different way, for instance, based on different electrical conductivity states (ON and OFF states) in response to an applied electric field. Organic/polymer electronic memory is likely to be an alternative or at least a supplementary technology to conventional semiconductor electronic memory.

According to the storage type of the device, electronic memory can be divided into two primary categories: volatile and non-volatile memory. Volatile memory eventually loses the stored information unless it is provided with a constant power supply or refreshed periodically with a pulse. The most widely used form of primary storage today is volatile memory. As shown in Figure 1.1, electronic memory can be further divided into sub-categories, as read only memory (ROM), hybrid memory, and random access memory (RAM). ROM is factory programmable only; data is physically encoded in the circuit and cannot be programmed after fabrication. Hybrid memory allows data to be read and re-written at any time. RAM requires the stored information to be periodically read and re-written, or refreshed, otherwise the data will be lost. Among these types of electronic memory, write-once read-many-times (WORM) memory, hybrid non-volatile and rewritable (flash) memory, static random access memory (SRAM) and dynamic random access memory (DRAM) are the most widely reported polymer memory devices.

A WORM memory device can be used to store archival standards, databases and other massive data where information has to be reliably preserved for a long period of time. Conventional CD-Rs, DVD [+ or -] Rs or programmable-read-only-memory (PROM) devices are examples of WORM memory. Flash memory is another type of non-volatile electronic memory. Different from WORM memory, its stored state can be electrically reprogrammed and it has the ability to write, read, erase and retain the stored state. Thus it is mutable or rewritable in nature. Due to its non-volatility, no power is needed to maintain the information stored in flash memory. DRAM is a type of volatile random access memory that stores each bit of data in a separate capacitor within an integrated circuit. Since real-world capacitors have charge-leaking tendencies, the stored data eventually fade unless the device is refreshed periodically. Because of this periodical refresh requirement, it is a volatile and dynamic memory. The volatility, ultrafast data access time and structural simplicity hold great promise for high density and fast responding performance, making DRAM memory the main memory for most computers. SRAM is another type of volatile memory. The term "static" differentiates it from...

Details zur Ausgabe

• Verlag: Royal Society of Chemistry
• Erscheinungsdatum: 2015
• Sprache: Englisch
• ISBN 10: 1782621164
• ISBN 13: 9781782621164
• Einband: Gebundene Ausgabe
• Anzahl der Seiten: 388
• Herausgeber: Chen Wen-chang
• Kontakt zum Hersteller: Nicht verfügbar
• Verantwortliche Person: preigu; mail@preigu.de; ; Lengericher Landstr. 19; Osnabrück; 49078; Deutschland