The Drift Diffusion Equation and its Applications in MOSFET Modeling (Computational Microelectronics) - Hardcover

Hansch, Wilfried

Hardcover

ISBN 10: 3211822224 ISBN 13: 9783211822227

Verlag: Springer Verlag GmbH, 1991

Inhaltsangabe

To be perfect does not mean that there is nothing to add, but rather there is nothing to take away Antoine de Saint-Exupery The drift-diffusion approximation has served for more than two decades as the cornerstone for the numerical simulation of semiconductor devices. However, the tremendous speed in the development of the semiconductor industry demands numerical simulation tools that are efficient and provide reliable results. This makes the development of a simulation tool an interdisciplinary task in which physics, numerical algorithms, and device technology merge. For the sake of an efficient code there are trade-offs between the different influencing factors. The numerical performance of a program that is highly flexible in device types and the geometries it covers certainly cannot compare with a program that is optimized for one type of device only. Very often the device is sufficiently described by a two- dimensional geometry. This is the case in a MOSFET, for example, if the gate length is small compared with the gate width. In these cases the geometry reduces to the specification of a two-dimensional device. Here again the simplest geometries, which are planar or at least rectangular surfaces, will give the most efficient numerical codes. The device engineer has to decide whether this reduced description of the real device is still suitable for his purposes.

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Reseña del editor

The drift diffusion equation has proved to be very powerful to describe charge transport in devices even with feature sizes entering the deep submicron region. It allows, in a very natural way, the unification of the important physical phenomena and the complex geometries into a mathematical code. The physics is phenomenologically described and it is of considerable interest to find its underlying microscopic description. The Drift Diffusion Equation and Its Applications in MOSFET Modeling will bridge this gap between phenomenological modeling and a rigorous microscopic approach. It focusses primarily on MOSFET related features. The book is organized in five chapters which cover the rigorous derivation of the Boltzmann equation from non-equilibrium quantum mechanics in Chapter I to a semi-empirical formulation of MOSFET degradation in Chapter V. It aims for a physical understanding of successfully used concepts in modeling. For instance a detailed account of the bulk and surface mobility in an electron phonon impurity system is given. In Chapter II the implications of the relaxation time approximation are discussed in very detail and the hydrodynamic equations for the case of strong nonequilibrium are developed. Especially the problem of a self-consistent closure and how velocity overshoot can be included in an extended drift diffusion equation is addressed. In Chapter IV analytical approaches to determine the high energy distribution of carriers in high electric fields are treated. The result of this chapter is a self-consistent formulation of impact ionisation and oxide injection which serves as an important input for Chapter V where we study the spatial and temporal built up of charges in the gate oxide of a MOSFET device under electrical stress. The book invites physicists to the realm of modeling and offers members of the modeling community the possibility to get acquainted with the theoretical concepts of carrier transport.

Details zur Ausgabe

• Verlag: Springer Verlag GmbH
• Erscheinungsdatum: 1991
• Sprache: Englisch
• ISBN 10: 3211822224
• ISBN 13: 9783211822227
• Einband: Tapa dura
• Anzahl der Seiten: 271
• Kontakt zum Hersteller: Nicht verfügbar
• Verantwortliche Person: Nicht verfügbar