Tunneling Field Effect Transistor Technology - Hardcover

Hardcover

ISBN 10: 3319316516 ISBN 13: 9783319316512

Verlag: Springer, 2016

Inhaltsangabe

This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs).  Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.

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This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs).  Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. 

·         Provides comprehensive reference to tunneling field effect transistors (TFETs);

·         Covers all aspects of TFETs, from device process to modeling and applications;

·         Enables design of power-efficient integrated circuits, with low power consumption TFETs.

Details zur Ausgabe

• Verlag: Springer
• Erscheinungsdatum: 2016
• Sprache: Englisch
• ISBN 10: 3319316516
• ISBN 13: 9783319316512
• Einband: Gebundene Ausgabe
• Auflage: 1
• Anzahl der Seiten: 222
• Herausgeber: Zhang Lining, Chan Mansun
• Kontakt zum Hersteller: Springer-Verlag GmbH; customerservice@springernature.com; ; Tiergartenstraße 17; Heidelberg; Baden-Württemberg; 69121; Deutschland