Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices - Hardcover

 
9783527347100: Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices

Inhaltsangabe

The book "Nitride Semiconductor Technology" provides an overview of nitride semiconductors and their uses in optoelectronics and power electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers are discussed in detail. The book further examines reliability issues in these materials and puts forward perspectives of integrating them with 2D materials for novel high-frequency and high-power devices.
 
In summary, it covers nitride semiconductor technology from materials to devices and provides the basis for further research.
 

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Über die Autorin bzw. den Autor

Fabrizio Roccaforte is Senior Researcher at Italian National Research Council's (CNR) Institute of Microelectronics and Microsystems (IMM) in Catania, Italy. He received his PhD from University of Göttingen, Germany in 1999 and worked as Scientific Consultant at STMicroelectronics N.V. in Italy before joining IMM. His research interests are in the field of wide band gap semiconductor materials and materials for power electronics devices. Dr. Roccaforte has authored more than 250 research articles, several review articles, five book chapters, and three patents.
 
Michal Leszczynski is a Professor of Polish Academy of Sciences at the Institute of High Pressure Physics (Unipress), Warsaw, Poland. He received his PhD (1990) and Habilitation (1996) in Physics from Institute of Physics - Polish Academy of Science, Warsaw. He then did postdoctoral research at Institute of Theoretical Physics, Trieste, Italy and at Institute of Advanced Materials, Brindisi, Italy. He has served as Visiting Professor at Center of Atomic Energy, Grenoble, France and as Advisor at Philips Analytical, Netherlands. Prof. Leszczynski is a co-founder and now vice-president (R&D) of TopGaN Lasers, a spinoff of Unipress. His research interests are nitride semiconductors, optoelectronics, crystal growth, crystal defects, and X-ray diffraction. He has authored more than 350 research articles.

Von der hinteren Coverseite

Groundbreaking book that combines information on power electronics and optoelectronic applications of nitride semiconductors

With contributions from a panel of international experts, Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices offers a state-of-the-art review of GaN-based technologies that covers the fields of both power electronics and optoelectronic devices. The authors present detailed explanations of the physical properties of materials and their growth methods. They also include information on GaN-based technology applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers.

Nitride Semiconductor Technology contains an in-depth examination of reliability issues with the materials and offers advice on integrating them with 2D materials for novel high-frequency and high-power devices. The book also contains a review of the most recent advances in the field. This important book:

  • Presents an in-depth overview of properties, growth techniques, and applicability of nitride semiconductors
  • Offers a one-stop resource that covers nitride semiconductor technology from materials to devices
  • Reviews a widerange of nitride semiconductor applications in high-power and high-frequency devices

Written for materials scientists, semiconductor physicists, semiconductor industry professionals, electrical engineers, and electrotechnical industry professionals, Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices combines the most recent information on power electronics and optoelectronic applications of nitride semiconductors.

Aus dem Klappentext

Groundbreaking book that combines information on power electronics and optoelectronic applications of nitride semiconductors

With contributions from a panel of international experts, Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices offers a state-of-the-art review of GaN-based technologies that covers the fields of both power electronics and optoelectronic devices. The authors present detailed explanations of the physical properties of materials and their growth methods. They also include information on GaN-based technology applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers.

Nitride Semiconductor Technology contains an in-depth examination of reliability issues with the materials and offers advice on integrating them with 2D materials for novel high-frequency and high-power devices. The book also contains a review of the most recent advances in the field. This important book:

  • Presents an in-depth overview of properties, growth techniques, and applicability of nitride semiconductors
  • Offers a one-stop resource that covers nitride semiconductor technology from materials to devices
  • Reviews a widerange of nitride semiconductor applications in high-power and high-frequency devices

Written for materials scientists, semiconductor physicists, semiconductor industry professionals, electrical engineers, and electrotechnical industry professionals, Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices combines the most recent information on power electronics and optoelectronic applications of nitride semiconductors.

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