Application of high magnetic fields in semiconductor physics. Proceedings of the international conference held in Grenoblered, France, September 13-17, 1982. (Lecture notes in physics, vol.177) - Softcover

Gottfried Landwehr

Softcover

ISBN 10: 3540119965 ISBN 13: 9783540119968

Verlag: Springer, 1983

Inhaltsangabe

Precision determination of h/e2 and the fine-structure constant from magneto-transport measurements on 2D electronic systems.- Gauge invariance and the quantised hall effect in two-dimensional systems.- Some remarks on the present understanding of the quantized hall effect in two dimensions.- Quantum transverse and hall resistivities in silicon MOS inversion layers at temperatures down to 12 mK.- Possible application of the quantized hall resistance to the realization of the electrical units.- Temperature dependence of the quantum hall effect in In0.53Ga0.47As-InP heterojunctions.- The quantized hall resistance and the Josephson effect.- On the two-dimensional wigner localization in high magnetic fields.- Negative magnetoresistance and Anderson localization in Si-MOSFETs and other 2D systems in semiconductor interfaces.- Electron-electron interaction effects in p-type germanium inversion layers.- Anharmonic effects in two-dimensional electron solids in magnetic fields.- Localisation and scaling of resistance of disordered systems including magnetic field effects.- High field magnetotransport IN GaAs/AlGaAs heterojunctions and SI mosfets.- Magnetotransport in GaInAs-InP heterojunctions and superlattices.- Quantum transport in GaInAs-AlInAs heterojunctions.- Bias voltage dependence of the temperature of hot n-Si inversion layer electrons in high magnetic fields.- Magnetoresistance in a two-dimensional impurity band.- Magnetoconductivity and cyclotron resonance studies on Na+-contaminated Si-SiO2-interfaces.- On the screening of impurities by a two dimensional electron gas in high magnetic fields.- Valley phase transition of Si inversion layers in high magnetic fields.- Electrical properties of layered materials in high magnetic fields.- Quantum oscillatory effect in graphite intercalation compounds.- Magneto-optical experiments on a thin InAs LAyer confined between GaSb in a parallel and perpendicular magnetic field.- Electronic structure of semiconductor superlattices.- Inelastic light scattering by two dimensional electron systems in high magnetic fields.- Anomalous cyclotron resonance of 2D electrons in AlxGa1?xAs/GaAs heterojunctions.- Faraday rotation and ellipticity in electron inversion layers of Si MOS structures.- Magnetooptical studies of deep impurities in III-V compounds.- Magneto optics of II-VI compounds under low and high excitation.- Magneto-reflectance of the B-exciton of CdS.- Magneto-optical studies of donor impurities under high pressure.- Magnetically tunable far infrared emitters and detectors.- Magnetooptical studies of phase transition in IV-VI compounds.- Transport properties in the active layer of a double heterostructure infection laser measured by a strong magnetic field.- Quantum oscillations of indirect interband magnetoabsorption below the Burstein edge.- Neutral bound excitons in a magnetic field.- Magneto-oscillation of relaxation time in electron hole-drops.- Experimental verification of nodal surface number conservation rule in magneto-optical effects of hydrogenic exciton.- Identification of contaminating donors in III-V compounds by far-infrared laser magneto-optical studies.- Magnetoplasma oscillations in a small conducting sphere.- Two-Photon spectroscopy in InSb at high magnetic fields.- Electron spin resonance in InSb under uniaxial stress.- Far-Infrared cyclotron resonance of hot carriers in InSb.- Magneto-thermal conductivity oscillations in n-type InSb.- Infrared emission due to the magnetoelectric-photo effect in InSb.- Optically pumped recombination radiation in zincblendesemiconductors under crossed magnetic and strain fields.- The metal- non metal transition in n-type InSb in high magnetic fields.- Shubnikov-de Haas effect in heavily doped n-InSb under pressure.- Interaction between T and L minima associated impurity states in n-InSb.- Anomalous NMR relaxation peak in InSb in the extreme quanium limit.- Dielectric function of Zero-Gap HiCdTe and HgMnte in a magnetic field.-

Details zur Ausgabe

• Verlag: Springer
• Erscheinungsdatum: 1983
• Sprache: Englisch
• ISBN 10: 3540119965
• ISBN 13: 9783540119968
• Einband: Taschenbuch
• Auflage: 1
• Anzahl der Seiten: 552
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