Lock-in Thermography: Basics and Use for Evaluating Electronic Devices and Materials (Springer Series in Advanced Microelectronics, 10) - Hardcover

Breitenstein, Otwin; Warta, Wilhelm; Langenkamp, Martin

 
9783540434399: Lock-in Thermography: Basics and Use for Evaluating Electronic Devices and Materials (Springer Series in Advanced Microelectronics, 10)

Inhaltsangabe

Although the first publication on lock-in thermography appeared in 1988 con­ cerning electronic device testing, this technique only became popular in the 1990s in connection with the nondestructive testing of materials (NDT, espe­ cially photothermal and thermoelastic investigations). In the early 1990s our group at the Max Planck Institute of Microstructure Physics in Halle had the task to image small leakage currents in silicon solar cells. We soon realized that neither conventional (steady-state) thermography nor the only avail­ able lock-in thermography system of that time was sensitive enough to image the tiny temperature differences caused by these leakage currents. Therefore we developed the "Dynamic Precision Contact Thermography" technique (DPCT), which was the first lock-in thermography system having a detection limit below 100 J. . LK. However, this system turned out to be too impractica­ ble for general use, since it worked in a mechanical contacting mode, and its measurement time was necessarily many hours. With the availability of highly sensitive focal plane array thermocameras at the end of the 1990s, the way was opened to construct highly sensitive IR-based lock-in thermogra­ phy systems. This was done independently by groups working in NDT and by us working in electronic device testing, whereby the different demands in the different fields lead to partly different approaches in the realization. For photothermal investigations a low lock-in frequency is usually used in order to see sub-surface details, and for thermoelastic investigations the thermo­ camera cannot usually be synchronized to the temperature modulation.

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Über die Autorin bzw. den Autor

Otwin Breitenstein studied physics at Leipzig university and graduated there in 1980. After dealing with spatially resolved capacitance spectroscopy of point defects (Scanning-DLTS) at the Institute of Solid State Physics and Electron Microscopy in Halle until 1992, he is a scientific staff member at Max Planck Institute of Microstructure Physics, Halle. His main interest field is electronic device and materials analysis by electron microscopic and IR-based methods.

Wilhelm Warta studied Physics at Würzburg and then Stuttgart University, where he graduated and received his PhD with research on charge transport properties of organic molecular crystals. 1985 he joined Fraunhofer Institute for Solar Energy Systems in Freiburg starting with work on carrier lifetime measurement techniques for semiconductor materials. His fields are the development of measurement techniques for solar cell development, characterization of solar cell material and solar cells, device and process simulation as well as high precision calibration of solar cells.

Von der hinteren Coverseite

The book deals with lock-in thermography as a special variant of the well known IR thermography for all applications where the heat of the sample can be pulsed. Compared to steady-state thermography, the lock-in mode enables a much improved signal/noise ratio (up to 1000x) by signal averaging, a far better lateral resolution, and it may provide inherent emissivity correction. Thus, it replaces thermal failure analysis previously carried out by using conventional IR microscopy, liquid crystal imaging, or fluorescent microthermal imaging. Various experimental approaches to lock-in thermography are reviewed with special emphasis on the systems developed by the authors themselves. Thus, the book provides a useful introduction to this technique and a helpful guide for scientists and engineers working in electronic device failure analysis. It concludes with a detailed theoretical treatment of the propagation of thermal waves, which is presented as a basis for various applications, e.g., integrated circuits, MOS structures, solar cells and solar modules.

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