New Data and Updates for I-VII, III-V, III-VI and IV-VI Compounds: 44A (Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology - New Series) - Hardcover

Hardcover

ISBN 10: 3540485287 ISBN 13: 9783540485285

Verlag: Springer, 2009

Inhaltsangabe

Systematics of Semiconductor Data.- Index of Substances, List of Symbols and Abbreviations, Conversion factors.- AgBr: heat of sublimation.- AgBr: lattice constants.- AgBr: compressibility, bulk modulus.- AgBr: Debye-Waller factor.- AgCl: heat of sublimation.- AgCl: lattice constants.- AgCl: compressibility, bulk modulus.- AgCl: Debye-Waller factor.- AgF: heat of sublimation.- AgF: lattice constants.- AgI, beta modification: Debye-Waller factor, mean square relative displacements.- AgI: heat of sublimation.- AgI: lattice constants.- AgI: phase transitions, p-T phase diagram.- AgI: compressibility, bulk modulus.- AgI: Debye-Waller factor.- Cu Cl1-x Br x : phonon wavenumbers.- Cu Cl1-x Br x : electron mobility, drift velocity.- CuBr, gamma modification: exciton energies.- CuBr, gamma modification: Debye-Waller factor, mean square relative displacements.- CuBr, gamma modification: spin-orbit splittings.- CuBr: elastic moduli, mode Grüneisen parameters, effective charges.- CuBr, gamma modification: electron mobility, drift velocity.- CuBr: phase transitions, p-T phase diagram.- CuBr: lattice constants.- CuBr: bulk modulus.- CuBr, gamma modification: biexciton and trion data.- CuBr: phonon frequencies and wavenumbers, related data.- CuBr: heat of sublimation.- CuCl, gamma modification: crystal structure, space group.- CuCl, gamma modification: band structure.- CuCl, gamma modification: deformation potentials.- CuCl, gamma modification: exciton energies, Rabi energies, oscillator strength.- CuCl, gamma modification: biexciton data.- CuCl, gamma modification: trion data.- CuCl, gamma modification: electron-hole plasma.- CuCl, gamma modification: thermal expansion coefficient.- CuCl, gamma modification: phonon frequencies, phonon wavenumbers, damping constants.- CuCl, gamma modification: elastic moduli, effective charge.- CuCl, gamma modification: Debye-Waller factors, mean square displacements.- CuCl: bulk modulus.- CuCl, gamma modification: dielectric constant.- CuCl, gamma modification: conductivity, resistivity.- CuCl, gamma modification: sublimation energy.- CuCl, gamma modification: lattice constants.- CuCl, gamma modification: mode Grüneisen parameters.- CuCl, gamma modification: exciton energies.- CuCl, gamma modification: phonon wavenumbers.- CuF: heat of sublimation.- CuF: lattice constants.- CuI, gamma modification: exciton energies.- CuI: elastic moduli, mode Grüneisen parameters, effective charges.- CuI: lattice constants.- CuI: bulk modulus.- CuI: phase transitions, p-T phase diagram.- CuI, gamma modification: biexciton and trion data.- CuI: heat of sublimation.- CuI, gamma modification: electron mobility, drift velocity.- CuI, gamma modification: phonon wavenumbers.- I-VII-compounds: phases and lattice parameter, melting point.- I-VII-compounds: chemical bond.- AlAs: band structure, energies at symmetry points.- AlAs: energy gaps.- AlAs: interband transition energies.- AlAs: camel’s back parameter.- AlAs: spin-orbit splittings.- AlAs: Dresselhaus spin-splitting parameter.- AlAs: effective Landé g-factors.- AlAs: effective-mass parameters.- AlAs: refractive index.- AlAs: dielectric constants.- AlAs: mobility.- Al x Ga1?x As: band structure.- Al x Ga1-x As: energy gaps.- Al x Ga1?x As: critical point energies.- Al x Ga1-x As: refractive index, absorption coefficient.- Al x Ga1-x As: mobility.- Al x Ga1?x As: impact ionization coefficients.- AlN: energy gaps.- AlN: critical point energies.- AlN: spin-orbit splittings, crystal-field splitting.- AlN: excitonic energy gaps, exciton binding energies and lifetime.- AlN: absorption, refractive index, dielectric function.- GaAs: band structure, energies at symmetry points.- GaAs: interband transition energies.- GaAs: energy gaps.- GaAs: exciton linewidth.- GaAs: spin-orbit splittings.- GaAs: Dresselhaus spin-splitting parameter.- GaAs: effective-mass parameters.- GaAs: effective Landé g-factors.- GaAs: refractive index.- GaAs: dielectric constants.- GaAs: resis

Über diesen Titel

Reseña del editor

The Landolt-Börnstein subvolumes III/44A and III/44B update the existing 8 volumes III/41 about Semiconductors and contain new Data and Updates for I-VII, III-V, III-VI, IV, VI and II-VI Compounds. The text, tables figures and references are provided in self-contained document files, each one dedicated to a substance and property. The first subvolume III/44A contains a "Systematics of Semiconductor Properties", which should help the non-specialist user to understand the meaning of the material parameters. Hyperlinked lists of substances and properties lead directly to the documents and make the electronic version an easy-to-use source of semiconductor data. In the new updates III/44A and III/44B, links to existing material in III/41 or to related documents for a specific substance are also included.

Details zur Ausgabe

• Verlag: Springer
• Erscheinungsdatum: 2009
• Sprache: Englisch
• ISBN 10: 3540485287
• ISBN 13: 9783540485285
• Einband: Tapa dura
• Anzahl der Seiten: 336
• Kontakt zum Hersteller: Nicht verfügbar
• Verantwortliche Person: CMN Printpool Inh. Mathis Neumann; https://www.also.com/ec/cms5/en_6000/6000/index.jsp; ; Friedrich-Karl-Str. 9; Hamburg; Deutschland