Spin Injection from Magnetic Thin Films into InGaAs Quantum Wells: The Physics of Electron Spin Polarization in Magnetic Metals and the Injection of ... in Ferromagnetic/Semiconductor Systems - Softcover
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The injection of spin polarised electrons into semiconductors is a fundamentalchallenge in the emergent field of spin electronics. This work isan investigation into spin injection from magnetic thin film contactsinto (100) GaAs/InGaAs quantum wells in spin light emitting diodes(spin LEDs). This structure is relevant to many quantum dot devicelayers. The spin injection characteristics are examined as a function of photon energy, magnetic field, applied bias, externaloptical efficiency and temperature.Further, the Heusler alloys Co2TiSn and Co2CrAl are investigatedthrough ab initio electronic structure calculations as potentially highlypolarised spin injectors. Pronounced minority spin band gaps were found in these alloysand while majority spins are metallic, minority spins undergo hole-likedispersion near the Fermi level.While spin injection is observed from both Heusler alloy and Fe injectors, Fe is a moreefficient spin injector and gives room temperature results. The biasdependent spin injection shows a decrease at higher voltages due tohot electron spin transport in the semiconductor and shows similartrends for both types of spin injector.
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Spin Injection from Magnetic Thin Films into InGaAs Quantum Wells : The Physics of Electron Spin Polarization in Magnetic Metals and the Injection of Spin Polarized Electrons in Ferromagnetic
Verlag:
Saarbrücken : VDM Verlag Dr. Müller, 2008
ISBN 10: 3639019997
ISBN 13: 9783639019995
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Taschenbuch. Zustand: Neu. Neu Neuware; original eingeschweisst; Rechnung mit MwSt.; new item, still sealed; Bestellungen bis 15 Uhr werden am gleichen Werktag verschickt_____The injection of spin polarised electrons into semiconductors is a fundamental challenge in the emergent field of spin electronics. This work is an investigation into spin injection from magnetic thin film contacts into (100) GaAs/InGaAs quantum wells in spin light emitting diodes (spin LEDs). This structure is relevant to many quantum dot device layers. The spin injection characteristics are examined as a function of photon energy, magnetic field, applied bias, external optical efficiency and temperature. Further, the Heusler alloys Co2TiSn and Co2CrAl are investigated through ab initio electronic structure calculations as potentially highly polarised spin injectors. Pronounced minority spin band gaps were found in these alloys and while majority spins are metallic, minority spins undergo hole-like dispersion near the Fermi level. While spin injection is observed from both Heusler alloy and Fe injectors, Fe is a more efficient spin injector and gives room temperature results. The bias dependent spin injection shows a decrease at higher voltages due to hot electron spin transport in the semiconductor and shows similar trends for both types of spin injector. -The injection of spin polarised electrons into semiconductors is a fundamental challenge in the emergent field of spin electronics. This work is an investigation into spin injection from magnetic thin film contacts into (100) GaAs/InGaAs quantum wells in spin light emitting diodes (spin LEDs). This structure is relevant to many quantum dot device layers. The spin injection characteristics are examined as a function of photon energy, magnetic field, applied bias, external optical efficiency and temperature. Further, the Heusler alloys Co2TiSn and Co2CrAl are investigated through ab initio electronic structure calculations as potentially highly polarised spin injectors. Pronounced minority spin band gaps were found in these alloys and while majority spins are metallic, minority spins undergo hole-like dispersion near the Fermi level. While spin injection is observed from both Heusler alloy and Fe injectors, Fe is a more efficient spin injector and gives room temperature results. The bias dependent spin injection shows a decrease at higher voltages due to hot electron spin transport in the semiconductor and shows similar trends for both types of spin injector. 208 pp. Englisch. Bestandsnummer des Verkäufers INF1000344446
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Spin Injection from Magnetic Thin Films into InGaAs Quantum Wells : The Physics of Electron Spin Polarization in Magnetic Metals and the Injection of Spin Polarized Electrons in Ferromagnetic
Verlag:
Saarbrücken : VDM Verlag Dr. Müller, 2008
ISBN 10: 3639019997
ISBN 13: 9783639019995
Neu
Taschenbuch
Anbieter: Che & Chandler Versandbuchhandlung, Fürstenberg OT Blumenow, Deutschland
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Taschenbuch. Zustand: Neu. Neu Neuware; original eingeschweisst; Rechnung mit MwSt.; new item, still sealed; Bestellungen bis 15 Uhr werden am gleichen Werktag verschickt_____The injection of spin polarised electrons into semiconductors is a fundamental challenge in the emergent field of spin electronics. This work is an investigation into spin injection from magnetic thin film contacts into (100) GaAs/InGaAs quantum wells in spin light emitting diodes (spin LEDs). This structure is relevant to many quantum dot device layers. The spin injection characteristics are examined as a function of photon energy, magnetic field, applied bias, external optical efficiency and temperature. Further, the Heusler alloys Co2TiSn and Co2CrAl are investigated through ab initio electronic structure calculations as potentially highly polarised spin injectors. Pronounced minority spin band gaps were found in these alloys and while majority spins are metallic, minority spins undergo hole-like dispersion near the Fermi level. While spin injection is observed from both Heusler alloy and Fe injectors, Fe is a more efficient spin injector and gives room temperature results. The bias dependent spin injection shows a decrease at higher voltages due to hot electron spin transport in the semiconductor and shows similar trends for both types of spin injector. -The injection of spin polarised electrons into semiconductors is a fundamental challenge in the emergent field of spin electronics. This work is an investigation into spin injection from magnetic thin film contacts into (100) GaAs/InGaAs quantum wells in spin light emitting diodes (spin LEDs). This structure is relevant to many quantum dot device layers. The spin injection characteristics are examined as a function of photon energy, magnetic field, applied bias, external optical efficiency and temperature. Further, the Heusler alloys Co2TiSn and Co2CrAl are investigated through ab initio electronic structure calculations as potentially highly polarised spin injectors. Pronounced minority spin band gaps were found in these alloys and while majority spins are metallic, minority spins undergo hole-like dispersion near the Fermi level. While spin injection is observed from both Heusler alloy and Fe injectors, Fe is a more efficient spin injector and gives room temperature results. The bias dependent spin injection shows a decrease at higher voltages due to hot electron spin transport in the semiconductor and shows similar trends for both types of spin injector. 208 pp. Englisch. Bestandsnummer des Verkäufers INF1000344446
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Spin Injection from Magnetic Thin Films into InGaAs Quantum Wells
Verlag:
VDM Verlag Dr. Mueller E.K., DE, 2008
ISBN 10: 3639019997
ISBN 13: 9783639019995
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