The dramatic impact of low dimensional semiconductor structures on c- rent and future device applications cannot be overstated. Research over the last decade has highlighted the use of quantum engineering to achieve p- viously unknown limits for device performance in research laboratories. The modi?ed electronic structure of semiconductor quantum structures results in transport and optical properties, which di?er from those of constituent bulk materials. The possibility to tailor properties, such as bandgap, strain, band o?set etc. , of two-dimensional (2D) semiconductors, e. g. quantum wells, for speci?c purposes has had an extensive impact on the electronics, which has resulted in a dramatic renewal process. For instance, 2D structures are today used in a large number of high speed electronics and optoelectronic appli- tions (e. g. detectors, light emitting diodes, modulators, switches and lasers) and in daily life, in e. g. LED-based tra?c lights, CD-players, cash registers. The introduction of impurities, also in very small concentrations, in a semiconductor can change its optical and electrical properties entirely. This attribute of the semiconductor is utilized in the manifoldness of their app- cations. This fact constitutes the principal driving force for investigation of the properties of the impurities in semiconductors. While the impurities in bulk materials have been investigated for a long time, and their properties are fairly well established by now, the corresponding studies of impurities in quantum wells is a more recent research area.
Die Inhaltsangabe kann sich auf eine andere Ausgabe dieses Titels beziehen.
The introduction of impurities, even in very small concentrations, in a semiconductor can change its optical and electrical properties entirely. This attribute of the semiconductor is utilized in the manifoldness of their applications. In this book, the progress on elucidating the physical properties of impurities confined in quantum structures are reviewed with an emphasis on the experimental aspects. The major results of various kinds of characterization, such as infrared spectroscopy, Raman measurements, luminescence characterization, perturbation spectroscopy and dynamical studies of the confined impurities are reviewed, but also the theoretical basis to calculate the electronic structure of the confined donors and acceptors are presented. This monograph also describes more specific aspects of the confined impurities such as the properties in the high doping regime and the effects of hydrogen passivation.
„Über diesen Titel“ kann sich auf eine andere Ausgabe dieses Titels beziehen.
Anbieter: Lucky's Textbooks, Dallas, TX, USA
Zustand: New. Bestandsnummer des Verkäufers ABLIING23Mar3113020231192
Anzahl: Mehr als 20 verfügbar
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
Zustand: New. In. Bestandsnummer des Verkäufers ria9783642622281_new
Anzahl: Mehr als 20 verfügbar
Anbieter: Chiron Media, Wallingford, Vereinigtes Königreich
PF. Zustand: New. Bestandsnummer des Verkäufers 6666-IUK-9783642622281
Anzahl: 10 verfügbar
Anbieter: California Books, Miami, FL, USA
Zustand: New. Bestandsnummer des Verkäufers I-9783642622281
Anzahl: Mehr als 20 verfügbar
Anbieter: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Deutschland
Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The dramatic impact of low dimensional semiconductor structures on c- rent and future device applications cannot be overstated. Research over the last decade has highlighted the use of quantum engineering to achieve p- viously unknown limits for device performance in research laboratories. The modi ed electronic structure of semiconductor quantum structures results in transport and optical properties, which di er from those of constituent bulk materials. The possibility to tailor properties, such as bandgap, strain, band o set etc. , of two-dimensional (2D) semiconductors, e. g. quantum wells, for speci c purposes has had an extensive impact on the electronics, which has resulted in a dramatic renewal process. For instance, 2D structures are today used in a large number of high speed electronics and optoelectronic appli- tions (e. g. detectors, light emitting diodes, modulators, switches and lasers) and in daily life, in e. g. LED-based tra c lights, CD-players, cash registers. The introduction of impurities, also in very small concentrations, in a semiconductor can change its optical and electrical properties entirely. This attribute of the semiconductor is utilized in the manifoldness of their app- cations. This fact constitutes the principal driving force for investigation of the properties of the impurities in semiconductors. While the impurities in bulk materials have been investigated for a long time, and their properties are fairly well established by now, the corresponding studies of impurities in quantum wells is a more recent research area. 148 pp. Englisch. Bestandsnummer des Verkäufers 9783642622281
Anzahl: 2 verfügbar
Anbieter: moluna, Greven, Deutschland
Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. The dramatic impact of low dimensional semiconductor structures on c- rent and future device applications cannot be overstated. Research over the last decade has highlighted the use of quantum engineering to achieve p- viously unknown limits for device perf. Bestandsnummer des Verkäufers 5064633
Anzahl: Mehr als 20 verfügbar
Anbieter: Books Puddle, New York, NY, USA
Zustand: New. pp. 148. Bestandsnummer des Verkäufers 2654512960
Anbieter: Majestic Books, Hounslow, Vereinigtes Königreich
Zustand: New. Print on Demand pp. 148 49:B&W 6.14 x 9.21 in or 234 x 156 mm (Royal 8vo) Perfect Bound on White w/Gloss Lam. Bestandsnummer des Verkäufers 55079583
Anzahl: 4 verfügbar
Anbieter: Biblios, Frankfurt am main, HESSE, Deutschland
Zustand: New. PRINT ON DEMAND pp. 148. Bestandsnummer des Verkäufers 1854512970
Anzahl: 4 verfügbar
Anbieter: preigu, Osnabrück, Deutschland
Taschenbuch. Zustand: Neu. Impurities Confined in Quantum Structures | Qing Xiang Zhao (u. a.) | Taschenbuch | viii | Englisch | 2012 | Springer Vieweg | EAN 9783642622281 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. Bestandsnummer des Verkäufers 105985907
Anzahl: 5 verfügbar