The study of condensed matter using optical techniques, where photons act as both probe and signal, has a long history. It is only recently, however, that the extraction of surface and interface information, with submonolayer resolution, has been shown to be possible using optical techniques (where "optical" applies to electromagnetic radiation in and around the visible region of the spectrum). This book describes these "epioptic" techniques, which have now been quite widely applied to semiconductor surfaces and interfaces. Particular emphasis in the book is placed on recent studies of submonolayer growth on well-characterised semiconductor surfaces, many of which have arisen from CEC DGJGII ESPRIT Basic Research Action No. 3177 "EPIOPTIC", and CEU DGIII ESPRIT Basic Research Action No. 6878 "EASI". Techniques using other areas of the spectrum such as the infra-red region (IR spectroscopy, in its various surface configurations), and the x-ray region (surface x-ray diffraction, x-ray standing wave), are omitted. The optical techniques described use simple lamp or small laser sources and are thus, in principle, easily accessible. Epioptic probes can provide new information on solid-gas, solid-liquid and liquid-liquid interfaces. They are particularly suited to growth monitoring. Emerging process technologies for fabricating submicron and nanoscale semiconductor devices and novel multilayer materials, whether based on silicon or compound semiconductors, all require extremely precise control of growth at surfaces. In situ, non-destructive, real-time monitoring and characterisation of surfaces under growth conditions is needed for further progress. Both atomic scale resolution, and non-destructive characterisation of buried structures, are required.
Die Inhaltsangabe kann sich auf eine andere Ausgabe dieses Titels beziehen.
The study of condensed matter using optical techniques, where photons act as both probe and signal, has a long history. It is only recently, however, that the extraction of surface and interface information, with submonolayer resolution, has been shown to be possible using optical techniques (where "optical" applies to electromagnetic radiation in and around the visible region of the spectrum). This book describes these "epioptic" techniques, which have now been quite widely applied to semiconductor surfaces and interfaces. Particular emphasis in the book is placed on recent studies of submonolayer growth on well-characterised semiconductor surfaces, many of which have arisen from CEC DGJGII ESPRIT Basic Research Action No. 3177 "EPIOPTIC", and CEU DGIII ESPRIT Basic Research Action No. 6878 "EASI". Techniques using other areas of the spectrum such as the infra-red region (IR spectroscopy, in its various surface configurations), and the x-ray region (surface x-ray diffraction, x-ray standing wave), are omitted. The optical techniques described use simple lamp or small laser sources and are thus, in principle, easily accessible. Epioptic probes can provide new information on solid-gas, solid-liquid and liquid-liquid interfaces. They are particularly suited to growth monitoring. Emerging process technologies for fabricating submicron and nanoscale semiconductor devices and novel multilayer materials, whether based on silicon or compound semiconductors, all require extremely precise control of growth at surfaces. In situ, non-destructive, real-time monitoring and characterisation of surfaces under growth conditions is needed for further progress. Both atomic scale resolution, and non-destructive characterisation of buried structures, are required.
This book describes recent developments in optical techniques for extracting surface and interface information with a resolution of less than a single atomic layer. These new "epioptic" techniques have now been quite widely applied to semiconductor surfaces and interfaces, and include polarised reflection techniques such as reflection anisotropy spectroscopy and spectroscopic ellipsometry, Raman scattering, and optical second harmonic and sum frequency generation. Epioptics has great potential in the area of growth monitoring, and in situ monitoring of semiconductor growth with submonolayer sensitivity has now been demonstrated in growth reactors under normal operating conditions. The book emphasizes recent studies of submonolayer growth on semiconductor surfaces.
„Über diesen Titel“ kann sich auf eine andere Ausgabe dieses Titels beziehen.
EUR 28,83 für den Versand von Vereinigtes Königreich nach Deutschland
Versandziele, Kosten & DauerGratis für den Versand innerhalb von/der Deutschland
Versandziele, Kosten & DauerAnbieter: moluna, Greven, Deutschland
Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. The study of condensed matter using optical techniques, where photons act as both probe and signal, has a long history. It is only recently, however, that the extraction of surface and interface information, with submonolayer resolution, has been shown to b. Bestandsnummer des Verkäufers 5070958
Anzahl: Mehr als 20 verfügbar
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The study of condensed matter using optical techniques, where photons act as both probe and signal, has a long history. It is only recently, however, that the extraction of surface and interface information, with submonolayer resolution, has been shown to be possible using optical techniques (where 'optical' applies to electromagnetic radiation in and around the visible region of the spectrum). This book describes these 'epioptic' techniques, which have now been quite widely applied to semiconductor surfaces and interfaces. Particular emphasis in the book is placed on recent studies of submonolayer growth on well-characterised semiconductor surfaces, many of which have arisen from CEC DGJGII ESPRIT Basic Research Action No. 3177 'EPIOPTIC', and CEU DGIII ESPRIT Basic Research Action No. 6878 'EASI'. Techniques using other areas of the spectrum such as the infra-red region (IR spectroscopy, in its various surface configurations), and the x-ray region (surface x-ray diffraction, x-ray standing wave), are omitted. The optical techniques described use simple lamp or small laser sources and are thus, in principle, easily accessible. Epioptic probes can provide new information on solid-gas, solid-liquid and liquid-liquid interfaces. They are particularly suited to growth monitoring. Emerging process technologies for fabricating submicron and nanoscale semiconductor devices and novel multilayer materials, whether based on silicon or compound semiconductors, all require extremely precise control of growth at surfaces. In situ, non-destructive, real-time monitoring and characterisation of surfaces under growth conditions is needed for further progress. Both atomic scale resolution, and non-destructive characterisation of buried structures, are required. Bestandsnummer des Verkäufers 9783642798221
Anzahl: 1 verfügbar
Anbieter: buchversandmimpf2000, Emtmannsberg, BAYE, Deutschland
Taschenbuch. Zustand: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The study of condensed matter using optical techniques, where photons act as both probe and signal, has a long history. It is only recently, however, that the extraction of surface and interface information, with submonolayer resolution, has been shown to be possible using optical techniques (where 'optical' applies to electromagnetic radiation in and around the visible region of the spectrum). This book describes these 'epioptic' techniques, which have now been quite widely applied to semiconductor surfaces and interfaces. Particular emphasis in the book is placed on recent studies of submonolayer growth on well-characterised semiconductor surfaces, many of which have arisen from CEC DGJGII ESPRIT Basic Research Action No. 3177 'EPIOPTIC', and CEU DGIII ESPRIT Basic Research Action No. 6878 'EASI'. Techniques using other areas of the spectrum such as the infra-red region (IR spectroscopy, in its various surface configurations), and the x-ray region (surface x-ray diffraction, x-ray standing wave), are omitted. The optical techniques described use simple lamp or small laser sources and are thus, in principle, easily accessible. Epioptic probes can provide new information on solid-gas, solid-liquid and liquid-liquid interfaces. They are particularly suited to growth monitoring. Emerging process technologies for fabricating submicron and nanoscale semiconductor devices and novel multilayer materials, whether based on silicon or compound semiconductors, all require extremely precise control of growth at surfaces. In situ, non-destructive, real-time monitoring and characterisation of surfaces under growth conditions is needed for further progress. Both atomic scale resolution, and non-destructive characterisation of buried structures, are required.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 248 pp. Englisch. Bestandsnummer des Verkäufers 9783642798221
Anzahl: 1 verfügbar
Anbieter: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Deutschland
Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The study of condensed matter using optical techniques, where photons act as both probe and signal, has a long history. It is only recently, however, that the extraction of surface and interface information, with submonolayer resolution, has been shown to be possible using optical techniques (where 'optical' applies to electromagnetic radiation in and around the visible region of the spectrum). This book describes these 'epioptic' techniques, which have now been quite widely applied to semiconductor surfaces and interfaces. Particular emphasis in the book is placed on recent studies of submonolayer growth on well-characterised semiconductor surfaces, many of which have arisen from CEC DGJGII ESPRIT Basic Research Action No. 3177 'EPIOPTIC', and CEU DGIII ESPRIT Basic Research Action No. 6878 'EASI'. Techniques using other areas of the spectrum such as the infra-red region (IR spectroscopy, in its various surface configurations), and the x-ray region (surface x-ray diffraction, x-ray standing wave), are omitted. The optical techniques described use simple lamp or small laser sources and are thus, in principle, easily accessible. Epioptic probes can provide new information on solid-gas, solid-liquid and liquid-liquid interfaces. They are particularly suited to growth monitoring. Emerging process technologies for fabricating submicron and nanoscale semiconductor devices and novel multilayer materials, whether based on silicon or compound semiconductors, all require extremely precise control of growth at surfaces. In situ, non-destructive, real-time monitoring and characterisation of surfaces under growth conditions is needed for further progress. Both atomic scale resolution, and non-destructive characterisation of buried structures, are required. 248 pp. Englisch. Bestandsnummer des Verkäufers 9783642798221
Anzahl: 2 verfügbar
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
Zustand: New. In. Bestandsnummer des Verkäufers ria9783642798221_new
Anzahl: Mehr als 20 verfügbar
Anbieter: Chiron Media, Wallingford, Vereinigtes Königreich
Paperback. Zustand: New. Bestandsnummer des Verkäufers 6666-IUK-9783642798221
Anzahl: 10 verfügbar
Anbieter: California Books, Miami, FL, USA
Zustand: New. Bestandsnummer des Verkäufers I-9783642798221
Anzahl: Mehr als 20 verfügbar
Anbieter: Best Price, Torrance, CA, USA
Zustand: New. SUPER FAST SHIPPING. Bestandsnummer des Verkäufers 9783642798221
Anzahl: 1 verfügbar
Anbieter: Biblios, Frankfurt am main, HESSE, Deutschland
Zustand: New. PRINT ON DEMAND pp. 248. Bestandsnummer des Verkäufers 1848031987
Anzahl: 4 verfügbar
Anbieter: Books Puddle, New York, NY, USA
Zustand: New. pp. 248. Bestandsnummer des Verkäufers 2648031993
Anzahl: 4 verfügbar