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Technical Report from the year 2011 in the subject Design (Industry, Graphics, Fashion), University of Southern California, language: English, abstract: Currently, nanowires have aroused intensive attention due to their interesting electric and optical properties as well as potentially wide application (For example, nanowires can be used as a promising structure for transistor channels). For compound semiconductor nanowires, Nanoscale Selective Area MOCVD (Metalorganic Chemical Vapor Deposition), or NS‐SAG, is a very attractive growth technique for the fabrication of sophisticated nanowire structure, because by using this technique, diameter and location of wires are controllable, with no incorporation of unwanted metals. It is achieved by deposition of a nano‐openingarray ‐patterned dielectric mask above the substrate. Since crystals cannot be formed on dielectric mask, nanowire growth only occurs at openings, with desired diameters and locations, as shown in Fig 1. Pattern of nano opening arrays is of vital importance since it governs the size, location and density of nanowires as wells as growth rate and behavior.
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Electron Beam Lithography Process Optimization
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Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Technical Report from the year 2011 in the subject Design (Industry, Graphics, Fashion), University of Southern California, language: English, abstract: Currently, nanowires have aroused intensive attention due to their interesting electric and optical properties as well as potentially wide application (For example, nanowires can be used as a promising structure for transistor channels). For compound semiconductor nanowires, Nanoscale Selective Area MOCVD (Metalorganic Chemical Vapor Deposition), or NS-SAG, is a very attractive growth technique for the fabrication of sophisticated nanowire structure, because by using this technique, diameter and location of wires are controllable, with no incorporation of unwanted metals. It is achieved by deposition of a nano-openingarray -patterned dielectric mask above the substrate. Since crystals cannot be formed on dielectric mask, nanowire growth only occurs at openings, with desired diameters and locations, as shown in Fig 1. Pattern of nano opening arrays is of vital importance since it governs the size, location and density of nanowires as wells as growth rate and behavior. 20 pp. Englisch. Bestandsnummer des Verkäufers 9783656083160
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Electron Beam Lithography Process Optimization : An Experimental Design Study
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Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Technical Report from the year 2011 in the subject Design (Industry, Graphics, Fashion), University of Southern California, language: English, abstract: Currently, nanowires have aroused intensive attention due to their interesting electric and optical properties as well as potentially wide application (For example, nanowires can be used as a promising structure for transistor channels). For compound semiconductor nanowires, Nanoscale Selective Area MOCVD (Metalorganic Chemical Vapor Deposition), or NS-SAG, is a very attractive growth technique for the fabrication of sophisticated nanowire structure, because by using this technique, diameter and location of wires are controllable, with no incorporation of unwanted metals. It is achieved by deposition of a nano-openingarray -patterned dielectric mask above the substrate. Since crystals cannot be formed on dielectric mask, nanowire growth only occurs at openings, with desired diameters and locations, as shown in Fig 1. Pattern of nano opening arrays is of vital importance since it governs the size, location and density of nanowires as wells as growth rate and behavior. Bestandsnummer des Verkäufers 9783656083160
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Electron Beam Lithography Process Optimization | An Experimental Design Study
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Taschenbuch. Zustand: Neu. Electron Beam Lithography Process Optimization | An Experimental Design Study | Rohan Handa (u. a.) | Taschenbuch | 20 S. | Englisch | 2011 | GRIN Verlag | EAN 9783656083160 | Verantwortliche Person für die EU: GRIN Publishing GmbH, Waltherstr. 23, 80337 München, info[at]grin[dot]com | Anbieter: preigu Print on Demand. Bestandsnummer des Verkäufers 106688518
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