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Design Of SRAM Cells For Low Power Dissipation And High SNM: Leakage power reduction and stability analysis of memory circuits - Softcover
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During past few decades CMOS IC technologies have been aggressively scaled down to nanometer regime. Due to verity of demands of different circuit applications, integrated memories especially SRAM cell layout has been facing significant improvement. So in depth knowledge and detail analysis about the stability of the SRAM cells and the impact of physical parameters variation is a must in modern CMOS designs. As these high density circuits consume an excessive amount of power and generate an increased amount of heat they are more susceptible to run time failures and present serious reliability problems. SRAM arrays consume a large portion of the chip area in today’s embedded system hence it seems very interesting as well as important to investigate this particular component. Circuit designers are realizing the importance of limiting power consumption and improving energy efficiency at all levels of design. Reducing the power dissipation in memories can significantly improve the system power-efficiency, performance, reliability, and overall costs. In this book various SRAM architectures with different leakage power reduction schemes have been investigated in Deep Submicron region.
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Dr. Geetika Srivastava, M.Tech., Ph.D.(Electronics). Has more than 8 years of teaching and research experience and published many reputed international journal research papers. Qualified UGC-NET Examination in Electronics Science. Presently working as Assistant Professor in Amity School of Engineering and Technology, AMITY University, Lucknow.
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Design Of SRAM Cells For Low Power Dissipation And High SNM
Verlag:
LAP LAMBERT Academic Publishing, 2012
ISBN 10: 3659263893
ISBN 13: 9783659263897
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Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Srivastava GeetikaDr. Geetika Srivastava, M.Tech., Ph.D.(Electronics). Has more than 8 years of teaching and research experience and published many reputed international journal research papers. Qualified UGC-NET Examination in Elect. Bestandsnummer des Verkäufers 5144118
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Design Of SRAM Cells For Low Power Dissipation And High SNM : Leakage power reduction and stability analysis of memory circuits
Verlag:
LAP LAMBERT Academic Publishing, 2012
ISBN 10: 3659263893
ISBN 13: 9783659263897
Neu
Taschenbuch
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Verkäuferbewertung 5 von 5 Sternen
Taschenbuch. Zustand: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - During past few decades CMOS IC technologies have been aggressively scaled down to nanometer regime. Due to verity of demands of different circuit applications, integrated memories especially SRAM cell layout has been facing significant improvement. So in depth knowledge and detail analysis about the stability of the SRAM cells and the impact of physical parameters variation is a must in modern CMOS designs. As these high density circuits consume an excessive amount of power and generate an increased amount of heat they are more susceptible to run time failures and present serious reliability problems. SRAM arrays consume a large portion of the chip area in today's embedded system hence it seems very interesting as well as important to investigate this particular component. Circuit designers are realizing the importance of limiting power consumption and improving energy efficiency at all levels of design. Reducing the power dissipation in memories can significantly improve the system power-efficiency, performance, reliability, and overall costs. In this book various SRAM architectures with different leakage power reduction schemes have been investigated in Deep Submicron region. Bestandsnummer des Verkäufers 9783659263897
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Design Of SRAM Cells For Low Power Dissipation And High SNM
Verlag:
LAP LAMBERT Academic Publishing Okt 2012, 2012
ISBN 10: 3659263893
ISBN 13: 9783659263897
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Taschenbuch. Zustand: Neu. Neuware -During past few decades CMOS IC technologies have been aggressively scaled down to nanometer regime. Due to verity of demands of different circuit applications, integrated memories especially SRAM cell layout has been facing significant improvement. So in depth knowledge and detail analysis about the stability of the SRAM cells and the impact of physical parameters variation is a must in modern CMOS designs. As these high density circuits consume an excessive amount of power and generate an increased amount of heat they are more susceptible to run time failures and present serious reliability problems. SRAM arrays consume a large portion of the chip area in today¿s embedded system hence it seems very interesting as well as important to investigate this particular component. Circuit designers are realizing the importance of limiting power consumption and improving energy efficiency at all levels of design. Reducing the power dissipation in memories can significantly improve the system power-efficiency, performance, reliability, and overall costs. In this book various SRAM architectures with different leakage power reduction schemes have been investigated in Deep Submicron region.Books on Demand GmbH, Überseering 33, 22297 Hamburg 92 pp. Englisch. Bestandsnummer des Verkäufers 9783659263897
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Design Of SRAM Cells For Low Power Dissipation And High SNM
Verlag:
LAP LAMBERT Academic Publishing Okt 2012, 2012
ISBN 10: 3659263893
ISBN 13: 9783659263897
Neu
Taschenbuch
Anbieter: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Deutschland
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Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -During past few decades CMOS IC technologies have been aggressively scaled down to nanometer regime. Due to verity of demands of different circuit applications, integrated memories especially SRAM cell layout has been facing significant improvement. So in depth knowledge and detail analysis about the stability of the SRAM cells and the impact of physical parameters variation is a must in modern CMOS designs. As these high density circuits consume an excessive amount of power and generate an increased amount of heat they are more susceptible to run time failures and present serious reliability problems. SRAM arrays consume a large portion of the chip area in today's embedded system hence it seems very interesting as well as important to investigate this particular component. Circuit designers are realizing the importance of limiting power consumption and improving energy efficiency at all levels of design. Reducing the power dissipation in memories can significantly improve the system power-efficiency, performance, reliability, and overall costs. In this book various SRAM architectures with different leakage power reduction schemes have been investigated in Deep Submicron region. 92 pp. Englisch. Bestandsnummer des Verkäufers 9783659263897
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Design Of Sram Cells For Low Power Dissipation And High Snm: Leakage Power Reduction And Stability Analysis Of Memory Circuits
Verlag:
Lap Lambert Academic Publishing, 2012
ISBN 10: 3659263893
ISBN 13: 9783659263897
Neu
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Paperback. Zustand: Brand New. 92 pages. 8.66x5.91x0.21 inches. In Stock. Bestandsnummer des Verkäufers 3659263893
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