Static random-access memory (SRAM) continues to be a critical component across a wide range of microelectronics applications from consumer wireless to high-end workstation and microprocessor applications. For almost all fields of applications, semiconductor memory has been a key enabling technology. It is forecasted that embedded memory in SOC designs will cover up to 90% of the total chip area. A representative example is the use of cache memory in microprocessors. The operational speed could be significantly improved by the application of on-chip cache memory Semiconductor memory arrays capable of storing large quantities of digital information are essential to all digital systems. The ever-increasing demand for larger data storage capacity has driven the fabrication technology and memory development toward more compact design rules and, consequently, toward higher storage densities. This book deals with design of low power static random-access memory cells and peripheral circuits for standalone RAMs, in 350nm focusing on stable operation and reduced leakage current and power dissipation in standby and active modes.
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Ms.Sakshi Rajput is working as Assistant Professor in Maharaja Surajmal Institute of Technology,Delhi.She received B.E.(Hons)in Electronics and Communication from University of Rajasthan,Jaipur and M.Tech(Hons)in VLSI Design from Guru Gobind Singh Indraprastha University,Delhi .Her research interest includes Low power VLSI design.
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Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Static random-access memory (SRAM) continues to be a critical component across a wide range of microelectronics applications from consumer wireless to high-end workstation and microprocessor applications. For almost all fields of applications, semiconductor memory has been a key enabling technology. It is forecasted that embedded memory in SOC designs will cover up to 90% of the total chip area. A representative example is the use of cache memory in microprocessors. The operational speed could be significantly improved by the application of on-chip cache memory Semiconductor memory arrays capable of storing large quantities of digital information are essential to all digital systems. The ever-increasing demand for larger data storage capacity has driven the fabrication technology and memory development toward more compact design rules and, consequently, toward higher storage densities. This book deals with design of low power static random-access memory cells and peripheral circuits for standalone RAMs, in 350nm focusing on stable operation and reduced leakage current and power dissipation in standby and active modes. 136 pp. Englisch. Bestandsnummer des Verkäufers 9783659320378
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Taschenbuch. Zustand: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Static random-access memory (SRAM) continues to be a critical component across a wide range of microelectronics applications from consumer wireless to high-end workstation and microprocessor applications. For almost all fields of applications, semiconductor memory has been a key enabling technology. It is forecasted that embedded memory in SOC designs will cover up to 90% of the total chip area. A representative example is the use of cache memory in microprocessors. The operational speed could be significantly improved by the application of on-chip cache memory Semiconductor memory arrays capable of storing large quantities of digital information are essential to all digital systems. The ever-increasing demand for larger data storage capacity has driven the fabrication technology and memory development toward more compact design rules and, consequently, toward higher storage densities. This book deals with design of low power static random-access memory cells and peripheral circuits for standalone RAMs, in 350nm focusing on stable operation and reduced leakage current and power dissipation in standby and active modes. Bestandsnummer des Verkäufers 9783659320378
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Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Rajput SakshiMs.Sakshi Rajput is working as Assistant Professor in Maharaja Surajmal Institute of Technology,Delhi.She received B.E.(Hons)in Electronics and Communication from University of Rajasthan,Jaipur and M.Tech(Hons)in VLSI De. Bestandsnummer des Verkäufers 5148317
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Taschenbuch. Zustand: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Static random-access memory (SRAM) continues to be a critical component across a wide range of microelectronics applications from consumer wireless to high-end workstation and microprocessor applications. For almost all fields of applications, semiconductor memory has been a key enabling technology. It is forecasted that embedded memory in SOC designs will cover up to 90% of the total chip area. A representative example is the use of cache memory in microprocessors. The operational speed could be significantly improved by the application of on-chip cache memory Semiconductor memory arrays capable of storing large quantities of digital information are essential to all digital systems. The ever-increasing demand for larger data storage capacity has driven the fabrication technology and memory development toward more compact design rules and, consequently, toward higher storage densities. This book deals with design of low power static random-access memory cells and peripheral circuits for standalone RAMs, in 350nm focusing on stable operation and reduced leakage current and power dissipation in standby and active modes.OmniScriptum SRL, Str. Armeneasca 28/1, office 1, 2012 Chisinau 136 pp. Englisch. Bestandsnummer des Verkäufers 9783659320378
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Taschenbuch. Zustand: Neu. CMOS SRAM Memory Chip Design | High Speed and Low Power | Sakshi Rajput | Taschenbuch | 136 S. | Englisch | 2016 | LAP LAMBERT Academic Publishing | EAN 9783659320378 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. Bestandsnummer des Verkäufers 106105839
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