Indium phosphide (InP) with a direct band gap of 1.35 eV is a promising material for photovoltaic solar energy conversion. The high radiation resistance and potentially high efficiency make InP solar cells excellent candidates for eventually using in space. InP and its related compounds have found potential applications in the design of high speed devices such as field effect transistors and high electron mobility transistor (FET, HEMT), charge coupled devices, solar and integrated optoelectronic devices such as radiation detectors and chemical sensors. InP schottky diodes are of special interest because of its special properties such as large mobility required for high speed devices, optimum bandgap for photovoltaic conversion and radiation resistance for solar cells.
S. Shankar Naik did doctorate from Sri Venkateswara University, Tirupati in 2013. He has authored of 12 research articles in reputed International Journals. His research interests are Ohmic and Schottky contacts to wide-bandgap semiconductors, Surface analysis of III-V and II-VI SCs, polymer based organic SCs and DLTS on SCs such as GaN and InP.
„Über diesen Titel“ kann sich auf eine andere Ausgabe dieses Titels beziehen.
Versand:
EUR 29,81
Von Vereinigtes Königreich nach USA
Versand:
EUR 3,57
Innerhalb der USA
Anbieter: Lucky's Textbooks, Dallas, TX, USA
Zustand: New. Bestandsnummer des Verkäufers ABLIING23Mar3113020282044
Anzahl: Mehr als 20 verfügbar
Anbieter: PBShop.store UK, Fairford, GLOS, Vereinigtes Königreich
PAP. Zustand: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000. Bestandsnummer des Verkäufers IQ-9783659378638
Anzahl: 15 verfügbar
Anbieter: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Deutschland
Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Indium phosphide (InP) with a direct band gap of 1.35 eV is a promising material for photovoltaic solar energy conversion. The high radiation resistance and potentially high efficiency make InP solar cells excellent candidates for eventually using in space. InP and its related compounds have found potential applications in the design of high speed devices such as field effect transistors and high electron mobility transistor (FET, HEMT), charge coupled devices, solar and integrated optoelectronic devices such as radiation detectors and chemical sensors. InP schottky diodes are of special interest because of its special properties such as large mobility required for high speed devices, optimum bandgap for photovoltaic conversion and radiation resistance for solar cells. 164 pp. Englisch. Bestandsnummer des Verkäufers 9783659378638
Anzahl: 2 verfügbar
Anbieter: PBShop.store US, Wood Dale, IL, USA
PAP. Zustand: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000. Bestandsnummer des Verkäufers L0-9783659378638
Anzahl: Mehr als 20 verfügbar
Anbieter: Ria Christie Collections, Uxbridge, Vereinigtes Königreich
Zustand: New. PRINT ON DEMAND Book; New; Fast Shipping from the UK. No. book. Bestandsnummer des Verkäufers ria9783659378638_lsuk
Anzahl: Mehr als 20 verfügbar
Anbieter: Chiron Media, Wallingford, Vereinigtes Königreich
PF. Zustand: New. Bestandsnummer des Verkäufers 6666-IUK-9783659378638
Anzahl: 10 verfügbar
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Taschenbuch. Zustand: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Indium phosphide (InP) with a direct band gap of 1.35 eV is a promising material for photovoltaic solar energy conversion. The high radiation resistance and potentially high efficiency make InP solar cells excellent candidates for eventually using in space. InP and its related compounds have found potential applications in the design of high speed devices such as field effect transistors and high electron mobility transistor (FET, HEMT), charge coupled devices, solar and integrated optoelectronic devices such as radiation detectors and chemical sensors. InP schottky diodes are of special interest because of its special properties such as large mobility required for high speed devices, optimum bandgap for photovoltaic conversion and radiation resistance for solar cells. Bestandsnummer des Verkäufers 9783659378638
Anzahl: 1 verfügbar
Anbieter: moluna, Greven, Deutschland
Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Sankar Naik S.S. Shankar Naik did doctorate from Sri Venkateswara University, Tirupati in 2013. He has authored of 12 research articles in reputed International Journals. His research interests are Ohmic and Schottky contacts to wide. Bestandsnummer des Verkäufers 5152286
Anzahl: Mehr als 20 verfügbar
Anbieter: Mispah books, Redhill, SURRE, Vereinigtes Königreich
Paperback. Zustand: Like New. Like New. book. Bestandsnummer des Verkäufers ERICA79636593786316
Anzahl: 1 verfügbar