Design Optimization of Ge-on-Si Photodetector: Performance Analysis of Ge Based Schottky Photodetector - Softcover
Inhaltsangabe
In recent years,extensive researches are going on high-speed low-noise photodetectors for optical communication. A photodetector plays a critical role in the overall performance of the system. III-V based photodetectors for high-performance communication system have already been reported.But,the technology is very expensive.Si is an obvious choice in such cases.Si technology has also the advantage of high reliability and high integrability. However, Si band-gap is not suitable for photodetection around the long-haul communication wavelength.Ge is a good candidate for designing such photodetectors(PD),given its smaller direct energy band-gap,and compatibility with Si. Si and Ge can also be combined to design PD at variable wavelengths.Here a physics based model is developed and then solved analytically or numerically by the appropriate initial and boundary conditions. The simulated results are then be verified with experimental data. The various performance of the PD are studied here. Finally the design optimization are carried out by choosing an appropriate objective function.This book is very much useful for Ph.D, M.Tech and B.Tech students of ECE branch.
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Über die Autorin bzw. den Autor
Dr.Dutta received PhD in Technology from University of Calcutta,India. He is now the Assiatant Professor of Kalyani Govt. Engg. College,India and vice-chair of IEEE Gold Affinity Group, also Treasurer of IEEE Photonics Society,Calcutta Section. He has twelve years of Teaching experience and published more than thirty international research papers.
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Design Optimization of Ge-on-Si Photodetector
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LAP LAMBERT Academic Publishing Mär 2014, 2014
ISBN 10: 3659513881
ISBN 13: 9783659513886
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Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -In recent years,extensive researches are going on high-speed low-noise photodetectors for optical communication. A photodetector plays a critical role in the overall performance of the system. III-V based photodetectors for high-performance communication system have already been reported.But,the technology is very expensive.Si is an obvious choice in such cases.Si technology has also the advantage of high reliability and high integrability. However, Si band-gap is not suitable for photodetection around the long-haul communication wavelength.Ge is a good candidate for designing such photodetectors(PD),given its smaller direct energy band-gap,and compatibility with Si. Si and Ge can also be combined to design PD at variable wavelengths.Here a physics based model is developed and then solved analytically or numerically by the appropriate initial and boundary conditions. The simulated results are then be verified with experimental data. The various performance of the PD are studied here. Finally the design optimization are carried out by choosing an appropriate objective function.This book is very much useful for Ph.D, M.Tech and B.Tech students of ECE branch. 140 pp. Englisch. Bestandsnummer des Verkäufers 9783659513886
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Design Optimization of Ge-on-Si Photodetector
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Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Dutta Himadri SekharDr.Dutta received PhD in Technology from University of Calcutta,India. He is now the Assiatant Professor of Kalyani Govt. Engg. College,India and vice-chair of IEEE Gold Affinity Group, also Treasurer of IEEE Phot. Bestandsnummer des Verkäufers 5161484
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LAP LAMBERT Academic Publishing Mär 2014, 2014
ISBN 10: 3659513881
ISBN 13: 9783659513886
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Taschenbuch. Zustand: Neu. This item is printed on demand - Print on Demand Titel. Neuware -In recent years,extensive researches are going on high-speed low-noise photodetectors for optical communication. A photodetector plays a critical role in the overall performance of the system. III-V based photodetectors for high-performance communication system have already been reported.But,the technology is very expensive.Si is an obvious choice in such cases.Si technology has also the advantage of high reliability and high integrability. However, Si band-gap is not suitable for photodetection around the long-haul communication wavelength.Ge is a good candidate for designing such photodetectors(PD),given its smaller direct energy band-gap,and compatibility with Si. Si and Ge can also be combined to design PD at variable wavelengths.Here a physics based model is developed and then solved analytically or numerically by the appropriate initial and boundary conditions. The simulated results are then be verified with experimental data. The various performance of the PD are studied here. Finally the design optimization are carried out by choosing an appropriate objective function.This book is very much useful for Ph.D, M.Tech and B.Tech students of ECE branch.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 140 pp. Englisch. Bestandsnummer des Verkäufers 9783659513886
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Design Optimization of Ge-on-Si Photodetector | Performance Analysis of Ge Based Schottky Photodetector
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LAP LAMBERT Academic Publishing, 2014
ISBN 10: 3659513881
ISBN 13: 9783659513886
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Taschenbuch. Zustand: Neu. Design Optimization of Ge-on-Si Photodetector | Performance Analysis of Ge Based Schottky Photodetector | Himadri Sekhar Dutta | Taschenbuch | 140 S. | Englisch | 2014 | LAP LAMBERT Academic Publishing | EAN 9783659513886 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu. Bestandsnummer des Verkäufers 105336053
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Design Optimization of Ge-on-Si Photodetector : Performance Analysis of Ge Based Schottky Photodetector
Verlag:
LAP LAMBERT Academic Publishing, 2014
ISBN 10: 3659513881
ISBN 13: 9783659513886
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Taschenbuch. Zustand: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - In recent years,extensive researches are going on high-speed low-noise photodetectors for optical communication. A photodetector plays a critical role in the overall performance of the system. III-V based photodetectors for high-performance communication system have already been reported.But,the technology is very expensive.Si is an obvious choice in such cases.Si technology has also the advantage of high reliability and high integrability. However, Si band-gap is not suitable for photodetection around the long-haul communication wavelength.Ge is a good candidate for designing such photodetectors(PD),given its smaller direct energy band-gap,and compatibility with Si. Si and Ge can also be combined to design PD at variable wavelengths.Here a physics based model is developed and then solved analytically or numerically by the appropriate initial and boundary conditions. The simulated results are then be verified with experimental data. The various performance of the PD are studied here. Finally the design optimization are carried out by choosing an appropriate objective function.This book is very much useful for Ph.D, M.Tech and B.Tech students of ECE branch. Bestandsnummer des Verkäufers 9783659513886
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Design Optimization of Ge-on-Si Photodetector: Performance Analysis of Ge Based Schottky Photodetector
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LAP LAMBERT Academic Publishing, 2014
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ISBN 13: 9783659513886
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