Introduction. - Electron transport in the 3D k-space: The Boltzmann transport equation and its projection onto spherical harmonics. - Device simulation. - Band structure and scattering mechanisms. - Results. - Transport in a quasi 2D hole gas: Coordinate systems and systems of equation. - Efficient k . p SE solver. - Efficient 2D k-space discretization and non-linear interpolation schemes. - Deterministic solver for the multisubband stationary BTE. - Poisson equation. - Iteration methods. - Results. - References.
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S.-M. Hong, A.-T. Pham, C. Jungemann
The book covers all aspects from the expansion of the Boltzmann transport equation with harmonic functions to application to devices, where transport in the bulk and in inversion layers is considered. The important aspects of stabilization and band structure mapping are discussed in detail. This is done not only for the full band structure of the 3D k-space, but also for the warped band structure of the quasi 2D hole gas. Efficient methods for building the Schrödinger equation for arbitrary surface or strain directions, gridding of the 2D k-space and solving it together with the other two equations are presented.
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Buch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - The book covers all aspects from the expansion of the Boltzmann transport equation with harmonic functions to application to devices, where transport in the bulk and in inversion layers is considered. The important aspects of stabilization and band structure mapping are discussed in detail. This is done not only for the full band structure of the 3D k-space, but also for the warped band structure of the quasi 2D hole gas. In the latter case the k p-Schrödinger equation has to be solved in addition to the Boltzmann transport equation and Poisson equation. Efficient methods for building the Schrödinger equation for arbitrary surface or strain directions, gridding of the 2D k-space and solving it together with the other two equations are presented. The features of the deterministic solvers for the 2D and 3D k-space are demonstrated by application to SOI NMOSFETs, THz SiGe HBTs and SiGe heterostructure DG PMOSFETs. For example, in the case of the PMOSFETs optimum surface/channel directions and strain conditions are investigated. Bestandsnummer des Verkäufers 9783709107775
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Buch. Zustand: Neu. Neuware -The book covers all aspects from the expansion of the Boltzmann transport equation with harmonic functions to application to devices, where transport in the bulk and in inversion layers is considered. The important aspects of stabilization and band structure mapping are discussed in detail. This is done not only for the full band structure of the 3D k-space, but also for the warped band structure of the quasi 2D hole gas. Efficient methods for building the Schrödinger equation for arbitrary surface or strain directions, gridding of the 2D k-space and solving it together with the other two equations are presented.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 248 pp. Englisch. Bestandsnummer des Verkäufers 9783709107775
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Buch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The book covers all aspects from the expansion of the Boltzmann transport equation with harmonic functions to application to devices, where transport in the bulk and in inversion layers is considered. The important aspects of stabilization and band structure mapping are discussed in detail. This is done not only for the full band structure of the 3D k-space, but also for the warped band structure of the quasi 2D hole gas. In the latter case the k p-Schrödinger equation has to be solved in addition to the Boltzmann transport equation and Poisson equation. Efficient methods for building the Schrödinger equation for arbitrary surface or strain directions, gridding of the 2D k-space and solving it together with the other two equations are presented. The features of the deterministic solvers for the 2D and 3D k-space are demonstrated by application to SOI NMOSFETs, THz SiGe HBTs and SiGe heterostructure DG PMOSFETs. For example, in the case of the PMOSFETs optimum surface/channel directions and strain conditions are investigated. 248 pp. Englisch. Bestandsnummer des Verkäufers 9783709107775
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