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Transport Simulation in Microelectronics: v. 3 (Progress in Numerical Simulation for Microelectronics S.) - Hardcover
Inhaltsangabe
Computer simulation of semiconductor processing equipment and devices requires the use of a wide variety of numerical methods. Of these methods, the Monte Carlo approach is perhaps most fundamentally suited to mod- eling physical events occurring on microscopic scales which are intricately connected to the particle structure of nature. Here physical phenomena can be simulated by following simulation particles (such as electrons, molecules, photons, etc. ) through a statistical sampling of scattering events. Monte Carlo is, however, generally looked on as a last resort due to the extremely slow convergence of these methods. It is of interest, then, to examine when in microelectronics it is necessary to use Monte Carlo methods, how such methods may be improved, and what are the alternatives. This book ad- dresses three general areas of simulation which frequently arise in semicon- ductor modeling where Monte Carlo methods playa significant role. In the first chapter the basic mathematical theory of the Boltzmann equation for particle transport is presented. The following chapters are devoted to the modeling of the transport processes and the associated Monte Carlo meth- ods. Specific examples of industrial applications illustrate the effectiveness and importance of these methods. Two of these areas concern simulation of physical particles which may be assigned a time dependent position and velocity. This includes the molecules of a dilute gas used in such processing equipment as chemi- cal vapor decomposition reactors and sputtering reactors. We also consider charged particles moving within a semiconductor lattice.
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Reseña del editor
Computer simulation of semiconductor processing equipment and devices requires the use of a wide variety of numerical methods. Of these methods, the Monte Carlo approach is perhaps most fundamentally suited to mod eling physical events occurring on microscopic scales which are intricately connected to the particle structure of nature. Here physical phenomena can be simulated by following simulation particles (such as electrons, molecules, photons, etc. ) through a statistical sampling of scattering events. Monte Carlo is, however, generally looked on as a last resort due to the extremely slow convergence of these methods. It is of interest, then, to examine when in microelectronics it is necessary to use Monte Carlo methods, how such methods may be improved, and what are the alternatives. This book ad dresses three general areas of simulation which frequently arise in semicon ductor modeling where Monte Carlo methods playa significant role. In the first chapter the basic mathematical theory of the Boltzmann equation for particle transport is presented. The following chapters are devoted to the modeling of the transport processes and the associated Monte Carlo meth ods. Specific examples of industrial applications illustrate the effectiveness and importance of these methods. Two of these areas concern simulation of physical particles which may be assigned a time dependent position and velocity. This includes the molecules of a dilute gas used in such processing equipment as chemi cal vapor decomposition reactors and sputtering reactors. We also consider charged particles moving within a semiconductor lattice.
Reseña del editor
This text unites the numerical simulation method for the diverse fields of rarefied gas dynamics, radiative heat transfer and charge transport in semiconductors by considering the underlying transport equations as variations of the Boltzmann equation. A distinguishing feature of this work is the combination of mathematical rigour with physically motivated approximations and assumptions to examine numerical simulation techniques and industrially important applications. Special attention is given to the discussion of methods and problems in the newly emerging field of ultra low pressure gas flows in microelectronics. The quasi-"Monte Carlo" methods, a little known but highly effective alternative to traditional "Monte Carlo" methods for integration and linear transport problems, is also featured. The book provides the general reader with an overview of the important issues which arise in the simulation of transport processes related to semiconductor fabrication. The specialist in one of the areas addressed should find the book a helpful introduction to the other fields.
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Transport Simulation in Microelectronics
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Zustand: Gut. Zustand: Gut | Sprache: Englisch | Produktart: Bücher. Bestandsnummer des Verkäufers 468702/3
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Transport Simulation in Microelectronics Kersch, Alfred and Morokoff, W.J.
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Zustand: Used: Very Good. Transport Simulation in Microelectronics | Kersch/Morokoff | Birkauser, 1995, in-8 cartonnage éditeur, 235 pages. Couverture propre. Dos solide. Intérieur frais. Exemplaire de bibliothèque : petit code barre en pied de 1re de couv., cotation au dos, rares et discrets petits tampons à l'intérieur de l'ouvrage. Bel état ! [BT15+]. Bestandsnummer des Verkäufers 0508U4PTX3N
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