Inhaltsangabe
Phase Change Random Access Memory (PCM) is one of the most optimized candidates for the next generation non-volatile memory due to its fast operation speed, high scalability, low power operation and fabrication costs. The transition from the amorphous to the crystalline phase is induced by heating the material above its crystallization temperature for a long enough time, and the switching back to the amorphous phase is realized by melting and quenching the material fast enough that it solidifies in the amorphous state. In this book the electrical and optical properties of various tin selenide compound alloys has been reported. All the alloys have shown high sheet resistance at room temperature and low sheet resistance during annealing. This interprets that the samples were amorphous during deposition and changed to crystalline during annealing. Increase in tin concentration reduced the crystallization temperature. The PCM was fabricated had high crystalline temperature, low crystallization temperature and a wide band gap.
Die Inhaltsangabe kann sich auf eine andere Ausgabe dieses Titels beziehen.
Über die Autorin bzw. den Autor
Karanja Joseph Kamau holds M.A Degree from Egerton University .He researched on Gender and Communication and worked with several Gender based organizations.He lectured at Egerton and Mt Kenya University on part time basis.Currently he works as an Admnistrator and Gender specialist/Consultantin Masinde Muliro University of Science and Technology
„Über diesen Titel“ kann sich auf eine andere Ausgabe dieses Titels beziehen.
Suchergebnisse für THE SCIENCE OF PHASE CHANGE RANDOM ACCESS MEMORIES...
Foto des Verkäufers
THE SCIENCE OF PHASE CHANGE RANDOM ACCESS MEMORIES (PCRAM)
Verlag:
LAP LAMBERT Academic Publishing Feb 2011, 2011
ISBN 10: 384430147X
ISBN 13: 9783844301472
Neu
Taschenbuch
Anbieter: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Deutschland
Verkäuferbewertung 5 von 5 Sternen
Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Phase Change Random Access Memory (PCM) is one of the most optimized candidates for the next generation non-volatile memory due to its fast operation speed, high scalability, low power operation and fabrication costs. The transition from the amorphous to the crystalline phase is induced by heating the material above its crystallization temperature for a long enough time, and the switching back to the amorphous phase is realized by melting and quenching the material fast enough that it solidifies in the amorphous state. In this book the electrical and optical properties of various tin selenide compound alloys has been reported. All the alloys have shown high sheet resistance at room temperature and low sheet resistance during annealing. This interprets that the samples were amorphous during deposition and changed to crystalline during annealing. Increase in tin concentration reduced the crystallization temperature. The PCM was fabricated had high crystalline temperature, low crystallization temperature and a wide band gap. 92 pp. Englisch. Bestandsnummer des Verkäufers 9783844301472
Neu kaufen
EUR 49,00
EUR 23,00 Versand
Versand von Deutschland nach USA
Versand von Deutschland nach USA
Anzahl: 2 verfügbar
Beispielbild für diese ISBN
The Science of Phase Change Random Access Memories (Pcram)
Verlag:
VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2011
ISBN 10: 384430147X
ISBN 13: 9783844301472
Neu
Softcover
Anbieter: Books Puddle, New York, NY, USA
Verkäuferbewertung 4 von 5 Sternen
Zustand: New. pp. 92. Bestandsnummer des Verkäufers 26128863246
Neu kaufen
EUR 76,66
EUR 3,40 Versand
Versand innerhalb von USA
Versand innerhalb von USA
Anzahl: 4 verfügbar
Beispielbild für diese ISBN
The Science of Phase Change Random Access Memories (Pcram)
Verlag:
VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2011
ISBN 10: 384430147X
ISBN 13: 9783844301472
Neu
Softcover
Anbieter: Majestic Books, Hounslow, Vereinigtes Königreich
Verkäuferbewertung 4 von 5 Sternen
Zustand: New. Print on Demand pp. 92 2:B&W 6 x 9 in or 229 x 152 mm Perfect Bound on Creme w/Gloss Lam. Bestandsnummer des Verkäufers 131724241
Neu kaufen
EUR 75,99
EUR 7,50 Versand
Versand von Vereinigtes Königreich nach USA
Versand von Vereinigtes Königreich nach USA
Anzahl: 4 verfügbar
Beispielbild für diese ISBN
The Science of Phase Change Random Access Memories (Pcram)
Verlag:
VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2011
ISBN 10: 384430147X
ISBN 13: 9783844301472
Neu
Softcover
Anbieter: Biblios, Frankfurt am main, HESSE, Deutschland
Verkäuferbewertung 4 von 5 Sternen
Zustand: New. Bestandsnummer des Verkäufers 18128863236
Neu kaufen
EUR 78,19
EUR 9,95 Versand
Versand von Deutschland nach USA
Versand von Deutschland nach USA
Anzahl: 4 verfügbar
Foto des Verkäufers
THE SCIENCE OF PHASE CHANGE RANDOM ACCESS MEMORIES (PCRAM)
Verlag:
LAP LAMBERT Academic Publishing, 2011
ISBN 10: 384430147X
ISBN 13: 9783844301472
Neu
Softcover
Anbieter: moluna, Greven, Deutschland
Verkäuferbewertung 5 von 5 Sternen
Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: KARANJA JOSEPHJoseph Muna Karanja holds B.Ed(science)in physics and maths from Egerton University,Kenya and Msc(Electronics) specializing in semiconductor electronics from Kenyatta University, Kenya. He has teaching experience in . Bestandsnummer des Verkäufers 5470655
Neu kaufen
EUR 41,05
EUR 48,99 Versand
Versand von Deutschland nach USA
Versand von Deutschland nach USA
Anzahl: Mehr als 20 verfügbar
Foto des Verkäufers
THE SCIENCE OF PHASE CHANGE RANDOM ACCESS MEMORIES (PCRAM)
Verlag:
LAP LAMBERT Academic Publishing Feb 2011, 2011
ISBN 10: 384430147X
ISBN 13: 9783844301472
Neu
Taschenbuch
Anbieter: buchversandmimpf2000, Emtmannsberg, BAYE, Deutschland
Verkäuferbewertung 5 von 5 Sternen
Taschenbuch. Zustand: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Phase Change Random Access Memory (PCM) is one of the most optimized candidates for the next generation non-volatile memory due to its fast operation speed, high scalability, low power operation and fabrication costs. The transition from the amorphous to the crystalline phase is induced by heating the material above its crystallization temperature for a long enough time, and the switching back to the amorphous phase is realized by melting and quenching the material fast enough that it solidifies in the amorphous state. In this book the electrical and optical properties of various tin selenide compound alloys has been reported. All the alloys have shown high sheet resistance at room temperature and low sheet resistance during annealing. This interprets that the samples were amorphous during deposition and changed to crystalline during annealing. Increase in tin concentration reduced the crystallization temperature. The PCM was fabricated had high crystalline temperature, low crystallization temperature and a wide band gap.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 92 pp. Englisch. Bestandsnummer des Verkäufers 9783844301472
Neu kaufen
EUR 49,00
EUR 60,00 Versand
Versand von Deutschland nach USA
Versand von Deutschland nach USA
Anzahl: 1 verfügbar
Foto des Verkäufers
THE SCIENCE OF PHASE CHANGE RANDOM ACCESS MEMORIES (PCRAM) : Semiconductor memory
Verlag:
LAP LAMBERT Academic Publishing, 2011
ISBN 10: 384430147X
ISBN 13: 9783844301472
Neu
Taschenbuch
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
Verkäuferbewertung 5 von 5 Sternen
Taschenbuch. Zustand: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Phase Change Random Access Memory (PCM) is one of the most optimized candidates for the next generation non-volatile memory due to its fast operation speed, high scalability, low power operation and fabrication costs. The transition from the amorphous to the crystalline phase is induced by heating the material above its crystallization temperature for a long enough time, and the switching back to the amorphous phase is realized by melting and quenching the material fast enough that it solidifies in the amorphous state. In this book the electrical and optical properties of various tin selenide compound alloys has been reported. All the alloys have shown high sheet resistance at room temperature and low sheet resistance during annealing. This interprets that the samples were amorphous during deposition and changed to crystalline during annealing. Increase in tin concentration reduced the crystallization temperature. The PCM was fabricated had high crystalline temperature, low crystallization temperature and a wide band gap. Bestandsnummer des Verkäufers 9783844301472
Neu kaufen
EUR 49,00
EUR 60,78 Versand
Versand von Deutschland nach USA
Versand von Deutschland nach USA
Anzahl: 1 verfügbar
Foto des Verkäufers
THE SCIENCE OF PHASE CHANGE RANDOM ACCESS MEMORIES (PCRAM) | Semiconductor memory
Verlag:
LAP LAMBERT Academic Publishing, 2011
ISBN 10: 384430147X
ISBN 13: 9783844301472
Neu
Taschenbuch
Anbieter: preigu, Osnabrück, Deutschland
Verkäuferbewertung 5 von 5 Sternen
Taschenbuch. Zustand: Neu. THE SCIENCE OF PHASE CHANGE RANDOM ACCESS MEMORIES (PCRAM) | Semiconductor memory | Joseph Karanja | Taschenbuch | 92 S. | Englisch | 2011 | LAP LAMBERT Academic Publishing | EAN 9783844301472 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu. Bestandsnummer des Verkäufers 107085455
Neu kaufen
EUR 43,30
EUR 70,00 Versand
Versand von Deutschland nach USA
Versand von Deutschland nach USA
Anzahl: 5 verfügbar