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Silicon Quantum Dots and its Applications in Solar Cells: Si Nanostucture and Opical, Electrical properties - Softcover
Inhaltsangabe
The structural, optical and electrical properties of crystalline silicon quantum dots (SiQDs) are examined for application to silicon based tandem cells. The approach has been to concentrate on all silicon devices by taking advantage of quantum confinement in low-dimensional Si. The book presents the fabrication technique to form Si nanocrystals in an oxide matrix. Structural analysis, using FTIR, micro-Raman spectroscopy, TEM, XRD, and SIM were detailed. It can be noticed that the packing density of Si QDs, correlated to the oxygen content of the silicon rich oxide layer can be control independently. The preliminary results present that a decrease in the oxygen content (x) results in an increased sharpness of the Strokes-mode Raman peak of nc-Si, attributed to an increase in the proportion of crystalline Si because of the increased number of SiQDs. However, the influence of the surface region on the crystallite core intensity scattering becomes dominant, when SiQD size diameter is very small (a > ~3 nm). The present work shows that a decrease in x-content leading to an increase of the SiQD concentration, initially results in the enhancement of the lateral conductivity in the SiQD.
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Reseña del editor
The structural, optical and electrical properties of crystalline silicon quantum dots (SiQDs) are examined for application to silicon based tandem cells. The approach has been to concentrate on all silicon devices by taking advantage of quantum confinement in low-dimensional Si. The book presents the fabrication technique to form Si nanocrystals in an oxide matrix. Structural analysis, using FTIR, micro-Raman spectroscopy, TEM, XRD, and SIM were detailed. It can be noticed that the packing density of Si QDs, correlated to the oxygen content of the silicon rich oxide layer can be control independently. The preliminary results present that a decrease in the oxygen content (x) results in an increased sharpness of the Strokes-mode Raman peak of nc-Si, attributed to an increase in the proportion of crystalline Si because of the increased number of SiQDs. However, the influence of the surface region on the crystallite core intensity scattering becomes dominant, when SiQD size diameter is very small (a > ~3 nm). The present work shows that a decrease in x-content leading to an increase of the SiQD concentration, initially results in the enhancement of the lateral conductivity in the SiQD.
Biografía del autor
Thipwan Fangsuwannarak is a lecturer in the school of electrical engineering at Suranaree University of Technology in Thailand. She received the PhD. Degree from the ARC Photovoltaics Centre of Excellence, UNSW in Australia. Her work focuses on fabrication and structural,optical, and electrical analysis of nano-materials for PV application.
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Silicon Quantum Dots and its Applications in Solar Cells
Verlag:
LAP LAMBERT Academic Publishing, 2011
ISBN 10: 3845409681
ISBN 13: 9783845409689
Neu
Softcover
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Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Fangsuwannarak ThipwanThipwan Fangsuwannarak is a lecturer in the school of electrical engineering at Suranaree University of Technology in Thailand. She received the PhD. Degree from the ARC Photovoltaics Centre of Excellence, UNSW . Bestandsnummer des Verkäufers 5481009
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Silicon Quantum Dots and its Applications in Solar Cells
Verlag:
LAP LAMBERT Academic Publishing Aug 2011, 2011
ISBN 10: 3845409681
ISBN 13: 9783845409689
Neu
Taschenbuch
Anbieter: buchversandmimpf2000, Emtmannsberg, BAYE, Deutschland
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Taschenbuch. Zustand: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The structural, optical and electrical properties of crystalline silicon quantum dots (SiQDs) are examined for application to silicon based tandem cells. The approach has been to concentrate on all silicon devices by taking advantage of quantum confinement in low-dimensional Si. The book presents the fabrication technique to form Si nanocrystals in an oxide matrix. Structural analysis, using FTIR, micro-Raman spectroscopy, TEM, XRD, and SIM were detailed. It can be noticed that the packing density of Si QDs, correlated to the oxygen content of the silicon rich oxide layer can be control independently. The preliminary results present that a decrease in the oxygen content (x) results in an increased sharpness of the Strokes-mode Raman peak of nc-Si, attributed to an increase in the proportion of crystalline Si because of the increased number of SiQDs. However, the influence of the surface region on the crystallite core intensity scattering becomes dominant, when SiQD size diameter is very small (a > ~3 nm). The present work shows that a decrease in x-content leading to an increase of the SiQD concentration, initially results in the enhancement of the lateral conductivity in the SiQD.Books on Demand GmbH, Überseering 33, 22297 Hamburg 212 pp. Englisch. Bestandsnummer des Verkäufers 9783845409689
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Silicon Quantum Dots and its Applications in Solar Cells : Si Nanostucture and Opical, Electrical properties
Verlag:
LAP LAMBERT Academic Publishing, 2011
ISBN 10: 3845409681
ISBN 13: 9783845409689
Neu
Taschenbuch
Anbieter: AHA-BUCH GmbH, Einbeck, Deutschland
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Taschenbuch. Zustand: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The structural, optical and electrical properties of crystalline silicon quantum dots (SiQDs) are examined for application to silicon based tandem cells. The approach has been to concentrate on all silicon devices by taking advantage of quantum confinement in low-dimensional Si. The book presents the fabrication technique to form Si nanocrystals in an oxide matrix. Structural analysis, using FTIR, micro-Raman spectroscopy, TEM, XRD, and SIM were detailed. It can be noticed that the packing density of Si QDs, correlated to the oxygen content of the silicon rich oxide layer can be control independently. The preliminary results present that a decrease in the oxygen content (x) results in an increased sharpness of the Strokes-mode Raman peak of nc-Si, attributed to an increase in the proportion of crystalline Si because of the increased number of SiQDs. However, the influence of the surface region on the crystallite core intensity scattering becomes dominant, when SiQD size diameter is very small (a ~3 nm). The present work shows that a decrease in x-content leading to an increase of the SiQD concentration, initially results in the enhancement of the lateral conductivity in the SiQD. Bestandsnummer des Verkäufers 9783845409689
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Silicon Quantum Dots and its Applications in Solar Cells
Verlag:
LAP LAMBERT Academic Publishing Aug 2011, 2011
ISBN 10: 3845409681
ISBN 13: 9783845409689
Neu
Taschenbuch
Anbieter: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Deutschland
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Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The structural, optical and electrical properties of crystalline silicon quantum dots (SiQDs) are examined for application to silicon based tandem cells. The approach has been to concentrate on all silicon devices by taking advantage of quantum confinement in low-dimensional Si. The book presents the fabrication technique to form Si nanocrystals in an oxide matrix. Structural analysis, using FTIR, micro-Raman spectroscopy, TEM, XRD, and SIM were detailed. It can be noticed that the packing density of Si QDs, correlated to the oxygen content of the silicon rich oxide layer can be control independently. The preliminary results present that a decrease in the oxygen content (x) results in an increased sharpness of the Strokes-mode Raman peak of nc-Si, attributed to an increase in the proportion of crystalline Si because of the increased number of SiQDs. However, the influence of the surface region on the crystallite core intensity scattering becomes dominant, when SiQD size diameter is very small (a ~3 nm). The present work shows that a decrease in x-content leading to an increase of the SiQD concentration, initially results in the enhancement of the lateral conductivity in the SiQD. 212 pp. Englisch. Bestandsnummer des Verkäufers 9783845409689
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Silicon Quantum Dots and its Applications in Solar Cells: Si Nanostucture and Opical, Electrical properties
Verlag:
LAP LAMBERT Academic Publishing, 2011
ISBN 10: 3845409681
ISBN 13: 9783845409689
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Paperback. Zustand: Like New. Like New. book. Bestandsnummer des Verkäufers ERICA77338454096816
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