Polycrystalline thin film solar cells based on CuInGaSe2 (CIGS) and CdTe as absorber layers have been developed with efficiencies < 15% using CdS as the buffer layer. However, the usage of CdS in these devices is harmful to the environment and has the potential to cause the manufacture problems due to the toxicity of ‘Cd’. Further, the collection efficiency of these solar cells is limited due to the narrow band gap of CdS (2.42 eV). Therefore, in order to improve the collection efficiency, to enhance the feasibility of manufacturing and to avoid environmental problems, it is desirable to replace CdS with a wide band gap material with appropriate properties. In this direction, novel materials have been proposed to replace the conventional CdS and In2S3 is one of the prominent alternatives. In this study, In2S3 films were grown by close spaced evaporation. The physical and chemical properties were investigated in relation to substrate temperature, film thickness and annealing in order to study the behavior of these films for their application as a buffer layer in solar cells.
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K. T. Ramakrishna Reddy is working as Professor of Physics at Sri Venkateswara University, Tirupati, India. He worked at various leading research laboratories in UK, Germany, Italy, Israel, China and Japan under different prestigious fellowships. He supervised 10 Ph. D. students, published 150 papers, carried out many projects and has a UK patent.
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Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Polycrystalline thin film solar cells based on CuInGaSe2 (CIGS) and CdTe as absorber layers have been developed with efficiencies 15% using CdS as the buffer layer. However, the usage of CdS in these devices is harmful to the environment and has the potential to cause the manufacture problems due to the toxicity of Cd . Further, the collection efficiency of these solar cells is limited due to the narrow band gap of CdS (2.42 eV). Therefore, in order to improve the collection efficiency, to enhance the feasibility of manufacturing and to avoid environmental problems, it is desirable to replace CdS with a wide band gap material with appropriate properties. In this direction, novel materials have been proposed to replace the conventional CdS and In2S3 is one of the prominent alternatives. In this study, In2S3 films were grown by close spaced evaporation. The physical and chemical properties were investigated in relation to substrate temperature, film thickness and annealing in order to study the behavior of these films for their application as a buffer layer in solar cells. 132 pp. Englisch. Bestandsnummer des Verkäufers 9783846534533
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Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Ramakrishna Reddy K. T.K. T. Ramakrishna Reddy is working as Professor of Physics at Sri Venkateswara University, Tirupati, India. He worked at various leading research laboratories in UK, Germany, Italy, Israel, China and Japan und. Bestandsnummer des Verkäufers 5497317
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Taschenbuch. Zustand: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Polycrystalline thin film solar cells based on CuInGaSe2 (CIGS) and CdTe as absorber layers have been developed with efficienciesVDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 132 pp. Englisch. Bestandsnummer des Verkäufers 9783846534533
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Taschenbuch. Zustand: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Polycrystalline thin film solar cells based on CuInGaSe2 (CIGS) and CdTe as absorber layers have been developed with efficiencies 15% using CdS as the buffer layer. However, the usage of CdS in these devices is harmful to the environment and has the potential to cause the manufacture problems due to the toxicity of Cd . Further, the collection efficiency of these solar cells is limited due to the narrow band gap of CdS (2.42 eV). Therefore, in order to improve the collection efficiency, to enhance the feasibility of manufacturing and to avoid environmental problems, it is desirable to replace CdS with a wide band gap material with appropriate properties. In this direction, novel materials have been proposed to replace the conventional CdS and In2S3 is one of the prominent alternatives. In this study, In2S3 films were grown by close spaced evaporation. The physical and chemical properties were investigated in relation to substrate temperature, film thickness and annealing in order to study the behavior of these films for their application as a buffer layer in solar cells. Bestandsnummer des Verkäufers 9783846534533
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Taschenbuch. Zustand: Neu. Investigations on In2S3 Layers Grown by Close Spaced Evaporation | Physical and Chemical Properties of As-grown and Annealed Films | K. T. Ramakrishna Reddy (u. a.) | Taschenbuch | 132 S. | Englisch | 2011 | LAP LAMBERT Academic Publishing | EAN 9783846534533 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. Bestandsnummer des Verkäufers 106746409
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