Magnetoresistive Random Access Memory: Tunnel magnetoresistance, Magnetic core memory, Electromagnetic induction, Electron, Phase-change memory, Giant ... Non-volatile random access memory - Softcover

 
9786130212872: Magnetoresistive Random Access Memory: Tunnel magnetoresistance, Magnetic core memory, Electromagnetic induction, Electron, Phase-change memory, Giant ... Non-volatile random access memory
Softcover
ISBN 10: 6130212879 ISBN 13: 9786130212872
Verlag: Alphascript Publishing, 2010

Inhaltsangabe

Please note that the content of this book primarily consists of articles available from Wikipedia or other free sources online. Magnetoresistive Random Access Memory is a non-volatile computer memory (NVRAM) technology, which has been under development since the 1990s. Continued increases in density of existing memory technologies – notably Flash RAM and DRAM – kept it in a niche role in the market, but its proponents believe that the advantages are so overwhelming that Magnetoresistive RAM will eventually become dominant for all types of memory, becoming a true universal memory.

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Reseña del editor

Please note that the content of this book primarily consists of articles available from Wikipedia or other free sources online. Magnetoresistive Random Access Memory is a non-volatile computer memory (NVRAM) technology, which has been under development since the 1990s. Continued increases in density of existing memory technologies – notably Flash RAM and DRAM – kept it in a niche role in the market, but its proponents believe that the advantages are so overwhelming that Magnetoresistive RAM will eventually become dominant for all types of memory, becoming a true universal memory.

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Verlag
Alphascript Publishing
Erscheinungsdatum
2010
Sprache
Englisch
ISBN 10 
6130212879
ISBN 13 
9786130212872
Einband
Tapa blanda
Anzahl der Seiten
124
Herausgeber
Miller Frederic P., Vandome Agnes F., McBrewster John
Kontakt zum Hersteller
Nicht verfügbar
Verantwortliche Person
Nicht verfügbar