Studies on Electrical Properties of GaN based MIS Type Schottky Device: Surface chemical states, Electrical and carrier transport properties of GaN based MIS type Schottky Junctions - Softcover
Inhaltsangabe
Group III-V Nitride semiconductors, especially gallium nitride (GaN), are very promising materials for high-power and high-frequency applications due to its outstanding properties such as a high breakdown field in wide-band gap semiconductor materials and a high saturation electron velocity. A number of GaN-based devices such as light-emitting diodes [LEDs], laser diodes [LDs], Solar-blind MSM-photodetectors, metal-semiconductor field effect transistor [MESFETs], heterostructure field-effect transistors [HFETs] and high electron mobility transistors [HEMTs] have been reported. However, larger leakage current through Schottky rectifiers adversely affect operation, power consumption, noise and reliability of devices. Reduction in the leakage current can be realized by employing an insulated layer metal-semiconductor technique. For the development of metal-insulator-semiconductor (MIS) devices, detailed electrical characterizations of metal/insulator/GaN MIS interfaces have to be investigated. This book deals with the high quality GaN-based MIS structures, specially on electrical properties, morphological and current transport mechanisms for microelectronic device applications.
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Über die Autorin bzw. den Autor
Dr. V. Manjunath completed Ph.D. (Physics) in 2018 from SV University, Tirupati. Currently working as Assistant Professor(C), Dept of Physics, SPMVV, Tirupati. Published 20 research publications, 2 book chapters and presented 32 papers in national/international journals with high impact factors. Current research interest: optoelectronic devices.
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Studies on Electrical Properties of GaN based MIS Type Schottky Device
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Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Group III-V Nitride semiconductors, especially gallium nitride (GaN), are very promising materials for high-power and high-frequency applications due to its outstanding properties such as a high breakdown field in wide-band gap semiconductor materials and a high saturation electron velocity. A number of GaN-based devices such as light-emitting diodes [LEDs], laser diodes [LDs], Solar-blind MSM-photodetectors, metal-semiconductor field effect transistor [MESFETs], heterostructure field-effect transistors [HFETs] and high electron mobility transistors [HEMTs] have been reported. However, larger leakage current through Schottky rectifiers adversely affect operation, power consumption, noise and reliability of devices. Reduction in the leakage current can be realized by employing an insulated layer metal-semiconductor technique. For the development of metal-insulator-semiconductor (MIS) devices, detailed electrical characterizations of metal/insulator/GaN MIS interfaces have to be investigated. This book deals with the high quality GaN-based MIS structures, specially on electrical properties, morphological and current transport mechanisms for microelectronic device applications. 108 pp. Englisch. Bestandsnummer des Verkäufers 9786138967729
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Taschenbuch. Zustand: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Group III-V Nitride semiconductors, especially gallium nitride (GaN), are very promising materials for high-power and high-frequency applications due to its outstanding properties such as a high breakdown field in wide-band gap semiconductor materials and a high saturation electron velocity. A number of GaN-based devices such as light-emitting diodes [LEDs], laser diodes [LDs], Solar-blind MSM-photodetectors, metal-semiconductor field effect transistor [MESFETs], heterostructure field-effect transistors [HFETs] and high electron mobility transistors [HEMTs] have been reported. However, larger leakage current through Schottky rectifiers adversely affect operation, power consumption, noise and reliability of devices. Reduction in the leakage current can be realized by employing an insulated layer metal-semiconductor technique. For the development of metal-insulator-semiconductor (MIS) devices, detailed electrical characterizations of metal/insulator/GaN MIS interfaces have to be investigated. This book deals with the high quality GaN-based MIS structures, specially on electrical properties, morphological and current transport mechanisms for microelectronic device applications.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 108 pp. Englisch. Bestandsnummer des Verkäufers 9786138967729
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Studies on Electrical Properties of GaN based MIS Type Schottky Device | Surface chemical states, Electrical and carrier transport properties of GaN based MIS type Schottky Junctions
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Taschenbuch. Zustand: Neu. Studies on Electrical Properties of GaN based MIS Type Schottky Device | Surface chemical states, Electrical and carrier transport properties of GaN based MIS type Schottky Junctions | V. Manjunath (u. a.) | Taschenbuch | Englisch | 2022 | Scholars' Press | EAN 9786138967729 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. Bestandsnummer des Verkäufers 121183907
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Studies on Electrical Properties of GaN based MIS Type Schottky Device : Surface chemical states, Electrical and carrier transport properties of GaN based MIS type Schottky Junctions
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Taschenbuch. Zustand: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Group III-V Nitride semiconductors, especially gallium nitride (GaN), are very promising materials for high-power and high-frequency applications due to its outstanding properties such as a high breakdown field in wide-band gap semiconductor materials and a high saturation electron velocity. A number of GaN-based devices such as light-emitting diodes [LEDs], laser diodes [LDs], Solar-blind MSM-photodetectors, metal-semiconductor field effect transistor [MESFETs], heterostructure field-effect transistors [HFETs] and high electron mobility transistors [HEMTs] have been reported. However, larger leakage current through Schottky rectifiers adversely affect operation, power consumption, noise and reliability of devices. Reduction in the leakage current can be realized by employing an insulated layer metal-semiconductor technique. For the development of metal-insulator-semiconductor (MIS) devices, detailed electrical characterizations of metal/insulator/GaN MIS interfaces have to be investigated. This book deals with the high quality GaN-based MIS structures, specially on electrical properties, morphological and current transport mechanisms for microelectronic device applications. Bestandsnummer des Verkäufers 9786138967729
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