Inhaltsangabe
In recent years, group III-V semiconductors have drawn considerable attention because they are technologically important as their electronic properties can be varied easily with different dopants. It also has a higher mobility, with a high peak-to-valley ratio in the velocity electric-field characteristics. These qualities are essential for high-speed microwave field-effect transistors, transferred electron oscillators and high-speed logics. The energy gap of InP is close to the optimum value for efficient conversion of solar radiation into electric power by single-junction photo voltaic cells. Metal-semiconductor (MS) structures play an important role in the device based on the III-V compound semiconductors in the form of Schottky barrier diodes (or) ohmic contacts. The fabrication of reliable and well-controlled electrical contacts is the key to the successful operation of almost all solid-state semiconductor devices. The continuous scaling of microelectronic devices to sub-microelectronic dimensions increases the need for high performance and rectifies contacts. Therefore, the formation of a high Schottky barrier height is an important research issue in InP device development.
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Über die Autorin bzw. den Autor
Prof. Reddy has published more than 190 articles in referred journals, and has been author or co-author of over 125 conference papers. Prof. Reddy has successfully guided 20 PhDs in the field of Advanced Electronic Materials (GaN). His current research interest is GaN/InP based metal/insulator/semiconductors (MIS) and heterostructures.
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Ti-Based Schottky Contacts to n-InP: Electronic Device Applications
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LAP LAMBERT Academic Publishing Apr 2018, 2018
ISBN 10: 6139814928
ISBN 13: 9786139814923
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Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -In recent years, group III-V semiconductors have drawn considerable attention because they are technologically important as their electronic properties can be varied easily with different dopants. It also has a higher mobility, with a high peak-to-valley ratio in the velocity electric-field characteristics. These qualities are essential for high-speed microwave field-effect transistors, transferred electron oscillators and high-speed logics. The energy gap of InP is close to the optimum value for efficient conversion of solar radiation into electric power by single-junction photo voltaic cells. Metal-semiconductor (MS) structures play an important role in the device based on the III-V compound semiconductors in the form of Schottky barrier diodes (or) ohmic contacts. The fabrication of reliable and well-controlled electrical contacts is the key to the successful operation of almost all solid-state semiconductor devices. The continuous scaling of microelectronic devices to sub-microelectronic dimensions increases the need for high performance and rectifies contacts. Therefore, the formation of a high Schottky barrier height is an important research issue in InP device development. 148 pp. Englisch. Bestandsnummer des Verkäufers 9786139814923
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Ti-Based Schottky Contacts to n-InP: Electronic Device Applications
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ISBN 13: 9786139814923
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Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Rajagopal Reddy VarraProf. Reddy has published more than 190 articles in referred journals, and has been author or co-author of over 125 conference papers. Prof. Reddy has successfully guided 20 PhDs in the field of Advanced Electron. Bestandsnummer des Verkäufers 385872134
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Ti-Based Schottky Contacts to n-InP: Electronic Device Applications
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ISBN 13: 9786139814923
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Ti-Based Schottky Contacts to n-InP: Electronic Device Applications
Verlag:
LAP LAMBERT Academic Publishing Apr 2018, 2018
ISBN 10: 6139814928
ISBN 13: 9786139814923
Neu
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Taschenbuch. Zustand: Neu. This item is printed on demand - Print on Demand Titel. Neuware -In recent years, group III-V semiconductors have drawn considerable attention because they are technologically important as their electronic properties can be varied easily with different dopants. It also has a higher mobility, with a high peak-to-valley ratio in the velocity electric-field characteristics. These qualities are essential for high-speed microwave field-effect transistors, transferred electron oscillators and high-speed logics. The energy gap of InP is close to the optimum value for efficient conversion of solar radiation into electric power by single-junction photo voltaic cells. Metal-semiconductor (MS) structures play an important role in the device based on the III-V compound semiconductors in the form of Schottky barrier diodes (or) ohmic contacts. The fabrication of reliable and well-controlled electrical contacts is the key to the successful operation of almost all solid-state semiconductor devices. The continuous scaling of microelectronic devices to sub-microelectronic dimensions increases the need for high performance and rectifies contacts. Therefore, the formation of a high Schottky barrier height is an important research issue in InP device development.Books on Demand GmbH, Überseering 33, 22297 Hamburg 148 pp. Englisch. Bestandsnummer des Verkäufers 9786139814923
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Ti-Based Schottky Contacts to n-InP: Electronic Device Applications
Verlag:
LAP LAMBERT Academic Publishing, 2018
ISBN 10: 6139814928
ISBN 13: 9786139814923
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Taschenbuch. Zustand: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - In recent years, group III-V semiconductors have drawn considerable attention because they are technologically important as their electronic properties can be varied easily with different dopants. It also has a higher mobility, with a high peak-to-valley ratio in the velocity electric-field characteristics. These qualities are essential for high-speed microwave field-effect transistors, transferred electron oscillators and high-speed logics. The energy gap of InP is close to the optimum value for efficient conversion of solar radiation into electric power by single-junction photo voltaic cells. Metal-semiconductor (MS) structures play an important role in the device based on the III-V compound semiconductors in the form of Schottky barrier diodes (or) ohmic contacts. The fabrication of reliable and well-controlled electrical contacts is the key to the successful operation of almost all solid-state semiconductor devices. The continuous scaling of microelectronic devices to sub-microelectronic dimensions increases the need for high performance and rectifies contacts. Therefore, the formation of a high Schottky barrier height is an important research issue in InP device development. Bestandsnummer des Verkäufers 9786139814923
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Ti-Based Schottky Contacts to n-InP: Electronic Device Applications
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LAP LAMBERT Academic Publishing, 2018
ISBN 10: 6139814928
ISBN 13: 9786139814923
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Taschenbuch. Zustand: Neu. Ti-Based Schottky Contacts to n-InP: Electronic Device Applications | Varra Rajagopal Reddy (u. a.) | Taschenbuch | 148 S. | Englisch | 2018 | LAP LAMBERT Academic Publishing | EAN 9786139814923 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu. Bestandsnummer des Verkäufers 113662870
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