Inhaltsangabe
III-nitrides semiconductors, specifically the GaN-based materials, including the binary GaN and related alloys with InN and AlN, such as the ternary AlGaN and InGaN as well as the quaternary InAlGaN have been intensively investigated in recent years because of the potential applications for optoelectronic devices operating in short wavelength spectral range and in high power and high temperature electronic devices. GaN-based materials are also ideal for the fabrication of high responsive and visible blind UV detectors because of the unique properties that encompass wide and direct band gap, high absorption coefficients, and sharp cutoff of the wavelength detection. The high breakdown voltage and high saturation velocity also enable the use of GaN-based materials for high-speed device operation and high power applications, such as power amplifiers for wireless base stations, low noise amplifiers, and high power switches. Sensing devices are another important application of the GaN-based materials, especially in harsh environments owing to the high thermal and chemical stability of these materials.
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Über die Autorin bzw. den Autor
Dr. Mansour S. Farhan, a Professor at College of Engineering/Wasit University. He has an experience in thin film fabrication technology of Optoelectronic devices - Dr. Hasan F. Khazaal, an Assistant Professor at College of Engineering/Wasit University . He has an experience in fabrication and tuning of microwave circuits and educational technology.
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The Development in Gallium-Nitrides Semiconductors Based Technology
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LAP LAMBERT Academic Publishing Aug 2018, 2018
ISBN 10: 6139851661
ISBN 13: 9786139851669
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Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -III-nitrides semiconductors, specifically the GaN-based materials, including the binary GaN and related alloys with InN and AlN, such as the ternary AlGaN and InGaN as well as the quaternary InAlGaN have been intensively investigated in recent years because of the potential applications for optoelectronic devices operating in short wavelength spectral range and in high power and high temperature electronic devices. GaN-based materials are also ideal for the fabrication of high responsive and visible blind UV detectors because of the unique properties that encompass wide and direct band gap, high absorption coefficients, and sharp cutoff of the wavelength detection. The high breakdown voltage and high saturation velocity also enable the use of GaN-based materials for high-speed device operation and high power applications, such as power amplifiers for wireless base stations, low noise amplifiers, and high power switches. Sensing devices are another important application of the GaN-based materials, especially in harsh environments owing to the high thermal and chemical stability of these materials. 104 pp. Englisch. Bestandsnummer des Verkäufers 9786139851669
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The Development in Gallium-Nitrides Semiconductors Based Technology
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ISBN 13: 9786139851669
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Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Farhan MansourDr. Mansour S. Farhan, a Professor at College of Engineering/Wasit University. He has an experience in thin film fabrication technology of Optoelectronic devices - Dr. Hasan F. Khazaal, an Assistant Professor at College. Bestandsnummer des Verkäufers 385874314
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The Development in Gallium-Nitrides Semiconductors Based Technology
Verlag:
LAP LAMBERT Academic Publishing Aug 2018, 2018
ISBN 10: 6139851661
ISBN 13: 9786139851669
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Taschenbuch. Zustand: Neu. This item is printed on demand - Print on Demand Titel. Neuware -III-nitrides semiconductors, specifically the GaN-based materials, including the binary GaN and related alloys with InN and AlN, such as the ternary AlGaN and InGaN as well as the quaternary InAlGaN have been intensively investigated in recent years because of the potential applications for optoelectronic devices operating in short wavelength spectral range and in high power and high temperature electronic devices. GaN-based materials are also ideal for the fabrication of high responsive and visible blind UV detectors because of the unique properties that encompass wide and direct band gap, high absorption coefficients, and sharp cutoff of the wavelength detection. The high breakdown voltage and high saturation velocity also enable the use of GaN-based materials for high-speed device operation and high power applications, such as power amplifiers for wireless base stations, low noise amplifiers, and high power switches. Sensing devices are another important application of the GaN-based materials, especially in harsh environments owing to the high thermal and chemical stability of these materials.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 104 pp. Englisch. Bestandsnummer des Verkäufers 9786139851669
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Taschenbuch. Zustand: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - III-nitrides semiconductors, specifically the GaN-based materials, including the binary GaN and related alloys with InN and AlN, such as the ternary AlGaN and InGaN as well as the quaternary InAlGaN have been intensively investigated in recent years because of the potential applications for optoelectronic devices operating in short wavelength spectral range and in high power and high temperature electronic devices. GaN-based materials are also ideal for the fabrication of high responsive and visible blind UV detectors because of the unique properties that encompass wide and direct band gap, high absorption coefficients, and sharp cutoff of the wavelength detection. The high breakdown voltage and high saturation velocity also enable the use of GaN-based materials for high-speed device operation and high power applications, such as power amplifiers for wireless base stations, low noise amplifiers, and high power switches. Sensing devices are another important application of the GaN-based materials, especially in harsh environments owing to the high thermal and chemical stability of these materials. Bestandsnummer des Verkäufers 9786139851669
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The Development in Gallium-Nitrides Semiconductors Based Technology
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ISBN 10: 6139851661
ISBN 13: 9786139851669
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Taschenbuch. Zustand: Neu. The Development in Gallium-Nitrides Semiconductors Based Technology | Mansour Farhan (u. a.) | Taschenbuch | 104 S. | Englisch | 2018 | LAP LAMBERT Academic Publishing | EAN 9786139851669 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. Bestandsnummer des Verkäufers 114175379
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