Design of Low Leakage SRAM - Softcover

Tripathi, Rajan Prasad; Verma, Rahul Kumar

 
9786139907861: Design of Low Leakage SRAM
Softcover
ISBN 10: 6139907861 ISBN 13: 9786139907861
Verlag: LAP LAMBERT Academic Publishing, 2018

Inhaltsangabe

The most research on the power consumption of circuits has been concentrated on the switching power and the power dissipated by the leakage current has been the relatively minor area. However, in the current VLSI process, the sub-threshold current becomes one of the major factors of the power consumption, especially in high-end memory. To reduce the leakage power in the SRAM, the power gating method can be applied and a major technique of the power gating is using sleep transistors to control the sub-threshold current. In this project, dual threshold voltages are adopted; normal SRAM cells have lower threshold voltages and the higher threshold voltages control the sleep transistors. The size of sleep transistors can be chosen by the worst case current and are applied to every block.

Die Inhaltsangabe kann sich auf eine andere Ausgabe dieses Titels beziehen.

Über die Autorin bzw. den Autor

Mr.Rajan Prasad Tripathi works as an Assistant Professor in Department of Electronics and Communication Engineering, Amity School of Engineering and Technology. Mr. Rahul Kumar Verma works an Assistant Professor in Department of Electronics and Communication Engineering, Amity School of Engineering and Technology

„Über diesen Titel“ kann sich auf eine andere Ausgabe dieses Titels beziehen.

Verlag
LAP LAMBERT Academic Publishing
Erscheinungsdatum
2018
Sprache
Englisch
ISBN 10 
6139907861
ISBN 13 
9786139907861
Einband
Taschenbuch
Anzahl der Seiten
56
Kontakt zum Hersteller
Nicht verfügbar
Verantwortliche Person
Edicoes Nosso Conhecimento
customerservice@vdm-vsg.de

SIA
Riga
1039
Litauen