Investigations on Complementary Metal Oxide Semiconductor Topologies: support to 4G technologie - Softcover

SARMA, NIMUSHAKAVI SN MURTI; Ramana Reddy, Male; Rama Swamy, Thonta

Softcover

ISBN 10: 620279965X ISBN 13: 9786202799652

Verlag: LAP LAMBERT Academic Publishing, 2021

Inhaltsangabe

The transistor development and its continuous down-scaling have improved during the last few decades the appearance of low-cost wireless communication systems targeting consumer products. The importance of device nonlinearity a new transistor model based on the independent representation of each of the transistor’s nonlinear elements is developed with the aim of quantifying the individual contribution of each of the transistors nonlinear elements, to the total distortion.The design of next-generation 4G systems is one of the most active and important of research and development in wireless communication systems. The demand has been increased for low-cost RFIC designs. Many types of research are going on front end design of RF transceiver. The design of the receiver path has become a challenging aspect, because of increased interferences around the communication path. Operating frequency is higher in RFIC design. This makes the receiver path to experience the internal noises in the system.

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Über die Autorin bzw. den Autor

This manuscript is based on the recent awarded thesis of one of the authors. Dr.Ramana Reddy is an associate Professor in Chatiatanya Bharathi Institute of Technology,,Hyderabad. Dr.N.S.Murti sarma and Dr.Rama Swamy are professors in Sreenidhi Institute of science and technology, Hyderabad

Details zur Ausgabe

• Verlag: LAP LAMBERT Academic Publishing
• Erscheinungsdatum: 2021
• Sprache: Englisch
• ISBN 10: 620279965X
• ISBN 13: 9786202799652
• Einband: Taschenbuch
• Anzahl der Seiten: 156
• Kontakt zum Hersteller: Nicht verfügbar
• Verantwortliche Person: SIA OmniScriptum Publishing; customerservice@vdm-vsg.de; ; Brivibas gatve 197; Riga; 1039; Lettland