Anbieter: liu xing, Nanjing, JS, China
paperback. Zustand: New. Paperback. Pub Date: 351 Language: Chinese Publisher: Harbin Institute of Technology Press. Properties. Preparation. Characterization and Devices of Posehene. Circular 3. Part 1 describes the preparation of graphene. which discusses the epitaxial growth of graphene in silicon carbide. and chemical vapor deposition method of graphene film growth. chemical method . Bestandsnummer des Verkäufers NR030112