Verwandte Artikel zu Process and Device Simulation for MOS-VLSI Circuits:...
Inhaltsangabe
P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ ent levels (government agencies, private industries, defense de partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde~ stood and that optimation be used to minimize the effect of sta tistical fluctuations.
Die Inhaltsangabe kann sich auf eine andere Ausgabe dieses Titels beziehen.
Críticas
`...this book is an extremely valuable collection on the crucial issues in numerical modeling of VLSI fabrication processes and devices, which will be useful to a large number of readers with diverse backgrounds.' American Scientist, 73 (1983)
Reseña del editor
P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ ent levels (government agencies, private industries, defense de partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde~ stood and that optimation be used to minimize the effect of sta tistical fluctuations.
„Über diesen Titel“ kann sich auf eine andere Ausgabe dieses Titels beziehen.
- VerlagKluwer Academic Publishers
- Erscheinungsdatum1983
- ISBN 10 902472824X
- ISBN 13 9789024728244
- EinbandTapa dura
- SpracheEnglisch
- Anzahl der Seiten636
- HerausgeberAntognetti P., Antoniadis D.A., Dutton Robert W., Oldham W.G.
- Kontakt zum HerstellerNicht verfügbar
Suchergebnisse für Process and Device Simulation for MOS-VLSI Circuits:...
Foto des Verkäufers
Process and Device Simulation for MOS-VLSI Circuits (NATO Science Series E:, 62)
Anbieter: Solr Books, Lincolnwood, IL, USA
Verkäuferbewertung 5 von 5 Sternen
Zustand: good. This book is in Good condition. There may be some notes and highligting but otherwise the book is in overall good condition. Bestandsnummer des Verkäufers 5D4000007TIR_ns
Anzahl: 1 verfügbar
Beispielbild für diese ISBN
Process and device simulation for MOS-VLSI circuits
Verlag:
Martinus Nijhoff, Boston, MA, 1983
ISBN 10: 902472824X
ISBN 13: 9789024728244
Gebraucht
Hardcover
Erstausgabe
Anbieter: Peter Rhodes, Southampton, Vereinigtes Königreich
Verkäuferbewertung 5 von 5 Sternen
Original Cloth. 1st Edition. NATO ASI series. Series E, Applied sciences No. 62. 24 x 16 cm., xii, 619 pp. The book is covered in white cloth with black lettering on the spine and front. CONDITION. VG+/ no dj. The pages are clean and tight. The corners and ends of the spine are lightly rubbed. Library marks and labels on spine and front end papers. Library stamps on page edges. Ex-Library. Bestandsnummer des Verkäufers 002974
Anzahl: 1 verfügbar
Beispielbild für diese ISBN
Process and Device Simulation for MOS-VLSI Circuits (NATO Science Series E:, 62)
Anbieter: dsmbooks, Liverpool, Vereinigtes Königreich
Verkäuferbewertung 4 von 5 Sternen
hardcover. Zustand: Good. Good. book. Bestandsnummer des Verkäufers D8S0-3-M-902472824X-3
Anzahl: 1 verfügbar