Biografía del autor
The Book will be based on the following work which also is the publication list for Dr Martin von Haartman; Ph. D. Thesis: Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors, xx, 124 pages, 9 appended papers, Stockholm, April 2006. http://www.diva-portal.org/kth/theses/abstract.xsql? dbid=3888 Journals: M. von Haartman, D. Wu, B. G. Malm, P.-E. Hellström, S.-L. Zhang and M. Östling, "Low-frequency noise in Si0.7Ge0.3 surface channel pMOSFETs with ALD HfO2/Al2O3 gate dielectrics" Solid-State Electronics, vol. 48, pp. 2271-2275, 2004. D. Wu, M. von Haartman, J. Seger, E. Tois, M. Tuominen, P.-E. Hellström, M. Östling, S.-L. Zhang, "Ni-salicided CMOS with a poly-SiGe/Al2O3/HfO2/Al2O3 gate stack" Microelectron Eng., vol. 77, pp. 36-41, 2005. M. von Haartman, J. Westlinder, D. Wu, B. G. Malm, P.-E. Hellström, J. Olsson, S.-L. Zhang, M. Östling, "Investigation of low-frequency noise and Coulomb scattering in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics" Solid-State Electronics, vol. 49, pp. 907-914, 2005. J. Seger, P.-E. Hellström, J. Lu, B. G. Malm, M. von Haartman, M. Östling, and S.-L. Zhang, "Lateral enroachment of Ni-silicide in the source/drain regions on ultra-thin silicon-on-insulator" Appl. Phys. Lett., vol. 86, 253507, 2005. C. Isheden, P.-E. Hellström, M. von Haartman, H. H. Radamson, and M. Östling, "pMOSFETs with recessed and selectively regrown Si1-xGex source/drain junctions" Mat. Sci. Sem. Proc., vol. 8, pp. 359-362, 2005. M. von Haartman, B. G. Malm, and M. Östling, "A comprehensive study on Low-frequency noise and mobility in Si and SiGe pMOSFETs with high-k gate dielectrics and TiN gate" IEEE Trans. Electron Devices, vol. 53, pp. 836-843, April 2006. J. Hållstedt, M. von Haartman, P.-E. Hellström, M. Östling, and H. H. Radamson, "Hole mobility in ultra thin body SOI pMOSFETs with buried SiGe or SiGeC channels" accept
Reseña del editor
This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.
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