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Over the last few years there has been increasing need for systematic and straregically designed experiments of surface morphology evolution resulting form ion bombardment induced sputtering. Although there is an impressive number of investi gations {1} concerned with semiconductor materials as a result of immediate applications, the most systematic investigations have been conducted with fcc metals with particular interest on single crystal Cu {2,3}. Evidence now exists that within certain para meters (i. e ion species (Ar+), ion energy (20-44 KeV), substrate 2 temperature (80-550° K), dose rate (100-500 gA cm- ) , residual x 5 9 pressure (5 10- to 5x10- mm Hg) and polar and azimuthal angle of ion incidence {4} reproducible surface morphology (etch pits and pyramids) is achieved on the (11 3 1) specific crystallographic orientation. The temporal development of individual surface features was alsoobserved in this laterstudy {4}, by employing an in situ ion source in the scanning electron microscope at Salford, a technique also empolyed in studies of the influence of polar angle of ion incidence {5} and surface contaminants {6} on the topographyof Ar+ bombarded Si. Studies have also been made on the variation of incident ion species with the (11 3 1) Cu surface and it was fully recognized {7} that residual surface contaminants when present could playa major role in dictating the morhological evolution.
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Over the last few years there has been increasing need for systematic and straregically designed experiments of surface morphology evolution resulting form ion bombardment induced sputtering. Although there is an impressive number of investi gations {1} concerned with semiconductor materials as a result of immediate applications, the most systematic investigations have been conducted with fcc metals with particular interest on single crystal Cu {2,3}. Evidence now exists that within certain para meters (i. e ion species (Ar+), ion energy (20-44 KeV), substrate 2 temperature (80-550° K), dose rate (100-500 gA cm- ) , residual x 5 9 pressure (5 10- to 5x10- mm Hg) and polar and azimuthal angle of ion incidence {4} reproducible surface morphology (etch pits and pyramids) is achieved on the (11 3 1) specific crystallographic orientation. The temporal development of individual surface features was alsoobserved in this laterstudy {4}, by employing an in situ ion source in the scanning electron microscope at Salford, a technique also empolyed in studies of the influence of polar angle of ion incidence {5} and surface contaminants {6} on the topographyof Ar+ bombarded Si. Studies have also been made on the variation of incident ion species with the (11 3 1) Cu surface and it was fully recognized {7} that residual surface contaminants when present could playa major role in dictating the morhological evolution.
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- VerlagSpringer
- Erscheinungsdatum2011
- ISBN 10 9400962185
- ISBN 13 9789400962187
- EinbandTapa blanda
- SpracheEnglisch
- Anzahl der Seiten780
- HerausgeberKossowsky R., Singhal S.C.
- Kontakt zum HerstellerNicht verfügbar
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Surface Engineering
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Zustand: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Proceedings of the NATO Advanced Study Institute on Surface Engineering, Les Arcs, France, July 3-15, 1983 Over the last few years there has been increasing need for systematic and straregically designed experiments of surface morphology evolution resu. Bestandsnummer des Verkäufers 5828880
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Surface Engineering
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ISBN 13: 9789400962187
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Taschenbuch. Zustand: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Over the last few years there has been increasing need for systematic and straregically designed experiments of surface morphology evolution resulting form ion bombardment induced sputtering. Although there is an impressive number of investi gations {1} concerned with semiconductor materials as a result of immediate applications, the most systematic investigations have been conducted with fcc metals with particular interest on single crystal Cu {2,3}. Evidence now exists that within certain para meters (i. e ion species (Ar+), ion energy (20-44 KeV), substrate 2 temperature (80-550° K), dose rate (100-500 gA cm- ) , residual x 5 9 pressure (5 10- to 5x10- mm Hg) and polar and azimuthal angle of ion incidence {4} reproducible surface morphology (etch pits and pyramids) is achieved on the (11 3 1) specific crystallographic orientation. The temporal development of individual surface features was alsoobserved in this laterstudy {4}, by employing an in situ ion source in the scanning electron microscope at Salford, a technique also empolyed in studies of the influence of polar angle of ion incidence {5} and surface contaminants {6} on the topographyof Ar+ bombarded Si. Studies have also been made on the variation of incident ion species with the (11 3 1) Cu surface and it was fully recognized {7} that residual surface contaminants when present could playa major role in dictating the morhological evolution. 780 pp. Englisch. Bestandsnummer des Verkäufers 9789400962187
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Surface Engineering
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Springer Netherlands, Springer Netherlands Okt 2011, 2011
ISBN 10: 9400962185
ISBN 13: 9789400962187
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Taschenbuch. Zustand: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Over the last few years there has been increasing need for systematic and straregically designed experiments of surface morphology evolution resulting form ion bombardment induced sputtering. Although there is an impressive number of investi gations {1} concerned with semiconductor materials as a result of immediate applications, the most systematic investigations have been conducted with fcc metals with particular interest on single crystal Cu {2,3}. Evidence now exists that within certain para meters (i. e ion species (Ar+), ion energy (20-44 KeV), substrate 2 temperature (80-550° K), dose rate (100-500 gA cm- ) , residual x 5 9 pressure (5 10- to 5x10- mm Hg) and polar and azimuthal angle of ion incidence {4} reproducible surface morphology (etch pits and pyramids) is achieved on the (11 3 1) specific crystallographic orientation. The temporal development of individual surface features was alsoobserved in this laterstudy {4}, by employing an in situ ion source in the scanning electron microscope at Salford, a technique also empolyed in studies of the influence of polar angle of ion incidence {5} and surface contaminants {6} on the topographyof Ar+ bombarded Si. Studies have also been made on the variation of incident ion species with the (11 3 1) Cu surface and it was fully recognized {7} that residual surface contaminants when present could playa major role in dictating the morhological evolution.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 780 pp. Englisch. Bestandsnummer des Verkäufers 9789400962187
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Surface Engineering : Surface Modification of Materials
Verlag:
Springer Netherlands, Springer Netherlands, 2011
ISBN 10: 9400962185
ISBN 13: 9789400962187
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Taschenbuch. Zustand: Neu. Druck auf Anfrage Neuware - Printed after ordering - Over the last few years there has been increasing need for systematic and straregically designed experiments of surface morphology evolution resulting form ion bombardment induced sputtering. Although there is an impressive number of investi gations {1} concerned with semiconductor materials as a result of immediate applications, the most systematic investigations have been conducted with fcc metals with particular interest on single crystal Cu {2,3}. Evidence now exists that within certain para meters (i. e ion species (Ar+), ion energy (20-44 KeV), substrate 2 temperature (80-550° K), dose rate (100-500 gA cm- ) , residual x 5 9 pressure (5 10- to 5x10- mm Hg) and polar and azimuthal angle of ion incidence {4} reproducible surface morphology (etch pits and pyramids) is achieved on the (11 3 1) specific crystallographic orientation. The temporal development of individual surface features was alsoobserved in this laterstudy {4}, by employing an in situ ion source in the scanning electron microscope at Salford, a technique also empolyed in studies of the influence of polar angle of ion incidence {5} and surface contaminants {6} on the topographyof Ar+ bombarded Si. Studies have also been made on the variation of incident ion species with the (11 3 1) Cu surface and it was fully recognized {7} that residual surface contaminants when present could playa major role in dictating the morhological evolution. Bestandsnummer des Verkäufers 9789400962187
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Surface Engineering: Surface Modification of Materials (NATO Science Series E:)
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Surface Engineering: Surface Modification of Materials
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