INTROD TO SEMICONDUCTOR DEVICE MODELLING - Softcover

C SNOWDEN

Softcover

ISBN 10: 981023693X ISBN 13: 9789810236939

Verlag: World Scientific, 1987

Inhaltsangabe

This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.

Über diesen Titel

Reseña del editor

This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.

Details zur Ausgabe

• Verlag: World Scientific
• Erscheinungsdatum: 1987
• Sprache: Englisch
• ISBN 10: 981023693X
• ISBN 13: 9789810236939
• Einband: Tapa blanda
• Anzahl der Seiten: 240
• Kontakt zum Hersteller: World Scientific Publishing; https://www.worldscientific.com/; ; 5 Toh Tuck Link; #01-01; 596224; Singapur
• Verantwortliche Person: Nicht verfügbar