Defects in Silicon: Proceedings of Symposium B on Science and Technology of Defects in Silicon of the 1989 E-Mrs Conference, Strasbourg, France, 30: . Society Symposia Proceedings, Band 9)

Symposium B on Science and Technology of Defects in Silicon

ISBN 10: 0444886192 / ISBN 13: 9780444886194

Verlag: North-Holland, 1989

Beschreibung

Gut/Very good: Buch bzw. Schutzumschlag mit wenigen Gebrauchsspuren an Einband, Schutzumschlag oder Seiten. / Describes a book or dust jacket that does show some signs of wear on either the binding, dust jacket or pages.

Bestandsnummer des Verkäufers M00444886192-V

Bibliografische Details

• Titel: Defects in Silicon: Proceedings of Symposium B on Science and Technology of Defects in Silicon of the 1989 E-Mrs Conference, Strasbourg, France, 30: . Society Symposia Proceedings, Band 9)
• Verlag: North-Holland
• Erscheinungsjahr: 1989
• Sprache: Englisch
• ISBN-10: 0444886192
• ISBN-13: 9780444886194
• Einband: Hardcover
• Zustand: very good

Über diesen Titel

Inhaltsangabe

This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities. In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.