High-Resolution X-Ray Scattering: From Thin Films to Lateral Nanostructures (Advanced Texts in Physics) von Ullrich Pietsch: Brand New Hardcover (2004)

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2nd edition. 408 pages. 9.25x6.25x1.00 inches. In Stock. This item is printed on demand.

Bestandsnummer des Verk�ufers __0387400923

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Bibliografische Details

Titel: High-Resolution X-Ray Scattering: From Thin Films to Lateral Nanostructures (Advanced Texts in Physics)
Verlag: Springer
Erscheinungsjahr: 2004
Sprache: Englisch
ISBN-10: 0387400923
ISBN-13: 9780387400921
Einband: Hardcover
Auflage: 2. Auflage
Zustand: Brand New

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Inhaltsangabe

During the last 20 years interest in high-resolution x-ray diffractometry and reflectivity has grown as a result of the development of the semiconductor industry and the increasing interest in material research of thin layers of magnetic, organic, and other materials. For example, optoelectronics requires a subsequent epitaxy of thin layers of different semiconductor materials. Here, the individuallayer thicknesses are scaled down to a few atomic layers in order to exploit quantum effects. For reasons of electronic and optical confinement, these thin layers are embedded within much thicker cladding layers or stacks of multilayers of slightly different chemical composition. It is evident that the interface quality of those quantum weHs is quite important for the function of devices. Thin metallic layers often show magnetic properties which do not ap� pear for thick layers or in bulk material. The investigation of the mutual interaction of magnetic and non-magnetic layers leads to the discovery of colossal magnetoresistance, for example. This property is strongly related to the thickness and interface roughness of covered layers.

Rese�a del editor

During the last 20 years interest in high-resolution x-ray diffractometry and reflectivity has grown as a result of the development of the semiconductor industry and the increasing interest in material research of thin layers of magnetic, organic, and other materials. For example, optoelectronics requires a subsequent epitaxy of thin layers of different semiconductor materials. Here, the individuallayer thicknesses are scaled down to a few atomic layers in order to exploit quantum effects. For reasons of electronic and optical confinement, these thin layers are embedded within much thicker cladding layers or stacks of multilayers of slightly different chemical composition. It is evident that the interface quality of those quantum weHs is quite important for the function of devices. Thin metallic layers often show magnetic properties which do not ap� pear for thick layers or in bulk material. The investigation of the mutual interaction of magnetic and non-magnetic layers leads to the discovery of colossal magnetoresistance, for example. This property is strongly related to the thickness and interface roughness of covered layers.

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