Very High Speed MOS Devices

Kohyama, S. (ed)

ISBN 10: 019856340X / ISBN 13: 9780198563402

Verlag: Clarendon Press, 1990

Beschreibung

This is an ex-library book and may have the usual library/used-book markings inside.This book has hardback covers. Clean from markings In good all round condition. No dust jacket. Please note the Image in this listing is a stock photo and may not match the covers of the actual item,1150grams, ISBN:019856340X. Bestandsnummer des Verkäufers 9397272

Bibliografische Details

Titel: Very High Speed MOS Devices

Verlag: Clarendon Press

Erscheinungsdatum: 1990

Einband: Hardcover

Zustand: Good

Über diesen Titel

Inhaltsangabe:

This comprehensive work describes very high speed and very high performance MOS devices which are mainstream technologies in VLSI and ULSI research. The book is wide ranging, its scope covering basic subjects through to a variety of applications. All the authors are researchers and engineers from the Toshiba Corporation, a world leader in MOS device technology, especially in the CMOS area, and so leading technologies and supporting knowledge are thoroughly reviewed. The book begins with a review of the concept and historical background of MOS devices, followed by their basic operating principles and physical characteristics. Process and device tchnologies aiming at submicron-scale devices, simulation and CAD and circuit design for both logic and memory LSIs are explained in detail, using many diagrams and actual data. In particular, high speed MOS devices are considered at the system level, rather than the individual device or component level, in the achievement of overall high system speed and performance. Future trends and issues in MOS technology, including three-dimensional LSIs, are also described.