orig.cloth Binding corner bumps,two small ink marks to bottom page-edge,VG. Textual photos & diagrams 24x16cm, xii,528 pp Contents: Introductory Remarks; Foundations & Physics of MOS Devices; Process Technology; Process Integration for MOS Devices; BiCMOS Devices; Simulation Technology; MOS Logic Devices; MOS Memory Devices; Future Directions & Technical Issues of MOS Devices. Binding corner bumps,two small ink marks to bottom page-edge,VG.

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Bibliografische Details

Titel: Very High Speed MOS Devices
Verlag: Clarendon Press, Oxford
Ver�ffentlichungsdatum: 1990
Bindung: Hardcover

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