An Improved Markov Random Field Design Approach For Digital Circuits

Jahanzeb Anwer

ISBN 10: 3844332634 / ISBN 13: 9783844332636

Verlag: LAP LAMBERT Academic Publishing Mai 2011, 2011

Beschreibung

This item is printed on demand - it takes 3-4 days longer - Neuware -As the MOSFET dimensions scale down to nanoscale level, the reliability of circuits based on these devices decreases. Therefore, a mechanism has to be devised that can make the nanoscale systems perform reliably using unreliable circuit components. The solution is fault-tolerant circuit design. Markov Random Field (MRF) is an effective approach that achieves fault-tolerance in integrated circuit design. The previous research on this technique suffers from limitations at the design, simulation and implementation levels. As improvements, the MRF fault-tolerance rules have been validated for a practical circuit example. The simulation framework is extended from thermal to a combination of thermal and random telegraph signal noise sources to provide a more rigorous noise environment for the simulation of nanoscale circuits. Moreover, an architecture-level improvement has been proposed in the design of previous MRF gates. The re-designed MRF is termed as Improved-MRF. By simulating various test circuits in Cadence, it is found that Improved-MRF circuits are 400 whereas MRF circuits are only 10 times more noise-tolerant than the CMOS alternatives. 88 pp. Englisch.

Bestandsnummer des Verkäufers 9783844332636

Bibliografische Details

• Titel: An Improved Markov Random Field Design Approach For Digital Circuits
• Verlag: LAP LAMBERT Academic Publishing Mai 2011
• Erscheinungsjahr: 2011
• Sprache: Englisch
• ISBN-10: 3844332634
• ISBN-13: 9783844332636
• Einband: Taschenbuch
• Zustand: Neu
• Abmessungen: 220B x 150 H x 6 T Millimeter Breite: 220 mm, Höhe: 150 mm, Tiefe: 6 mm
• Gewicht: 149 Gramm

Über diesen Titel

Inhaltsangabe

As the MOSFET dimensions scale down to nanoscale level, the reliability of circuits based on these devices decreases. Therefore, a mechanism has to be devised that can make the nanoscale systems perform reliably using unreliable circuit components. The solution is fault-tolerant circuit design. Markov Random Field (MRF) is an effective approach that achieves fault-tolerance in integrated circuit design. The previous research on this technique suffers from limitations at the design, simulation and implementation levels. As improvements, the MRF fault-tolerance rules have been validated for a practical circuit example. The simulation framework is extended from thermal to a combination of thermal and random telegraph signal noise sources to provide a more rigorous noise environment for the simulation of nanoscale circuits. Moreover, an architecture-level improvement has been proposed in the design of previous MRF gates. The re-designed MRF is termed as Improved-MRF. By simulating various test circuits in Cadence, it is found that Improved-MRF circuits are 400 whereas MRF circuits are only 10 times more noise-tolerant than the CMOS alternatives.

Über die Autorinnen und Autoren

The authors work under the banner of fault-tolerance research group in Universiti Teknologi PETRONAS (UTP). The group is conducting research on various aspects of fault-tolerant circuit design with the support of UTP and MOSTI (Ministry of Science, Technology and Innovation) Malaysia.

The authors work under the banner of fault-tolerance research group in Universiti Teknologi PETRONAS (UTP). The group is conducting research on various aspects of fault-tolerant circuit design with the support of UTP and MOSTI (Ministry of Science, Technology and Innovation) Malaysia.

The authors work under the banner of fault-tolerance research group in Universiti Teknologi PETRONAS (UTP). The group is conducting research on various aspects of fault-tolerant circuit design with the support of UTP and MOSTI (Ministry of Science, Technology and Innovation) Malaysia.