MODEL & PARAMETER EXTRACT TECH SILICON-BASED RADIO FREQ DEV

Zhang Ao

ISBN 10: 9811255350 / ISBN 13: 9789811255359

Verlag: World Scientific, 2023

MODEL & PARAMETER EXTRACT TECH SILICON-BASED RADIO FREQ DEV | Zhang Ao | Buch | Gebunden | Englisch | 2023 | World Scientific | EAN 9789811255359 | Verantwortliche Person für die EU: Libri GmbH, Europaallee 1, 36244 Bad Hersfeld, gpsr[at]libri[dot]de | Anbieter: preigu Print on Demand. Bestandsnummer des Verkäufers 121284036

Inhaltsangabe:

This comprehensive compendium describes the basic modeling techniques for silicon-based semiconductor devices, introduces the basic concepts of silicon-based passive and active devices, and provides its state-of-the-art modeling and equivalent circuit parameter extraction methods. The unique reference text benefits practicing engineers, technicians, senior undergraduate and first-year graduate students working in the areas of RF, microwave and solid-state device, and integrated circuit design.

Bibliografische Details

Titel: MODEL & PARAMETER EXTRACT TECH SILICON-BASED...
Verlag: World Scientific
Erscheinungsdatum: 2023
Einband: Buch
Zustand: Neu